Low-permittivity BaCuSi4O10-based dielectric Ceramics: An available solution to connect low temperature cofired ceramic technology and millimeter-wave communications

被引:0
作者
Wang, Wei [1 ]
Wang, Xin [1 ]
Bao, Jian [1 ]
Jiang, Jiapei [1 ]
Fang, Zhen [1 ]
Jin, Biaobing [2 ]
Shi, Zhongqi [3 ]
Adel Darwish, Moustafa [4 ]
Chen, Yawei [5 ]
Liang, Qixin [5 ]
Zhang, Meirong [5 ]
Xu, Diming [1 ]
Du, Chao [1 ]
Zhou, Di [1 ]
机构
[1] Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education & International Center for Dielectric Research, School of Electronic Science and Engineering, Xi'an Jiaotong University, Shaanxi, Xi'an,710049, China
[2] Research Institute of Superconductor Electronics (RISE), School of Electronic Science and Engineering, Nanjing University, Jiangsu, Nanjing,210093, China
[3] State Key Laboratory for Mechanical Behaviour of Materials, Xi'an Jiaotong University, Shaanxi, Xi'an,710049, China
[4] Physics Department, Faculty of Science, Tanta University, Al-Geish st., Tanta,31527, Egypt
[5] Shenzhen Microgate Technology Co., Ltd., Guangdong, Shenzhen,518118, China
来源
Chemical Engineering Journal | 1600年 / 494卷
关键词
Silicon compounds;
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