Low-permittivity BaCuSi4O10-based dielectric Ceramics: An available solution to connect low temperature cofired ceramic technology and millimeter-wave communications

被引：0

作者：

Wang, Wei ^{[1
]}

Wang, Xin ^{[1
]}

Bao, Jian ^{[1
]}

Jiang, Jiapei ^{[1
]}

Fang, Zhen ^{[1
]}

Jin, Biaobing ^{[2
]}

Shi, Zhongqi ^{[3
]}

Adel Darwish, Moustafa ^{[4
]}

Chen, Yawei ^{[5
]}

Liang, Qixin ^{[5
]}

Zhang, Meirong ^{[5
]}

Xu, Diming ^{[1
]}

Du, Chao ^{[1
]}

Zhou, Di ^{[1
]}

机构：

[1] Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education & International Center for Dielectric Research, School of Electronic Science and Engineering, Xi'an Jiaotong University, Shaanxi, Xi'an,710049, China

[2] Research Institute of Superconductor Electronics (RISE), School of Electronic Science and Engineering, Nanjing University, Jiangsu, Nanjing,210093, China

[3] State Key Laboratory for Mechanical Behaviour of Materials, Xi'an Jiaotong University, Shaanxi, Xi'an,710049, China

[4] Physics Department, Faculty of Science, Tanta University, Al-Geish st., Tanta,31527, Egypt

[5] Shenzhen Microgate Technology Co., Ltd., Guangdong, Shenzhen,518118, China

来源：

Chemical Engineering Journal | 1600年 / 494卷

关键词：

Silicon compounds;

D O I：

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摘要：

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