A 11.3-16.6-GHz VCO With Constructive Switched Magnetic Coupling in 65-nm CMOS

被引：1

作者：

Lyu, Yuetong ^{[1
]}

Song, Changwenquan ^{[1
]}

Qin, Pei ^{[2
]}

Wu, Liang ^{[1
]}

机构：

[1] Chinese Univ Hong Kong, Sch Sci & Engn SSE, Guangdong Hong Kong Macao Joint Lab Millimeter Wa, Shenzhen 518172, Peoples R China

[2] South China Univ Technol, Sch Microelect, Guangdong Hong Kong Macao Joint Lab Millimeter Wa, Guangzhou 510641, Peoples R China

来源：

IEEE JOURNAL ON EMERGING AND SELECTED TOPICS IN CIRCUITS AND SYSTEMS | 2024年 / 14卷 / 01期

基金：

中国国家自然科学基金;

关键词：

CMOS; dual-band; figure-of-merit (FoM); phase noise; quality factor (Q); constructive switched magnetic coupling (CSMC); tuning range; voltage-controlled oscillator (VCO); WIDE TUNING-RANGE; DESIGN; NOISE; INDUCTOR;

D O I：

10.1109/JETCAS.2023.3344510

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Conventional transformer-based magnetic tuning has demonstrated dual-band or even multi-band operation for voltage-controlled oscillators (VCOs). However, the destructive magnetic coupling employed introduces implicit loss to the transformer thus degrading its quality factor (Q), and achieves a continuous frequency coverage resulting in inferior performance. To address this issue, this paper proposes a constructive switched magnetic coupling (CSMC) technique, realizing dual-band operation with the Q improvement into one band due to the in-phase coupling and the explicit switch. For validation, a transformer employing the CSMC technique is designed and deployed in a dual-band VCO design. Fabricated in a 65-nm CMOS process, the VCO is measured with an oscillation frequency range of 37.8%, from 11.3 to 16.6 GHz, while consuming 2.5-mW from a 0.65-V voltage supply. Within the entire frequency coverage, the measured phase noise ranges from -129.6 to -123.7 at 10-MHz offset, resulting in FoM of 186-192.1 dBc/Hz. The core area of the chip is 0.43 x 0.25 mm(2) excluding pads.

引用

页码：133 / 141

页数：9

共 24 条

[1]

Kossel M., Et al., LC PLL with 1.2-octave locking range based on mutual-inductance switching in 45-nm SOI CMOS, IEEE J. Solid-State Circuits, 44, 2, pp. 436-449, (2009)

[2]

Park P., Kim C.S., Park M.Y., Kim S.D., Yu H.K., Variable inductance multilayer inductor with MOSFET switch control, IEEE Electron Device Lett, 25, 3, pp. 144-146, (2004)

[3]

Demirkan M., Bruss S.P., Spencer R.R., Design of wide tuningrange CMOS VCOs using switched coupled-inductors, IEEE J. Solid-State Circuits, 43, 5, pp. 1156-1163, (2008)

[4]

Akhtar S., Ipek M., Lin J., Staszewski R., Litmanen P., Quad band digitally controlled oscillator for WCDMA transmitter in 90 nm CMOS, Proc. IEEE Custom Integr. Circuits Conf., pp. 129-132, (2006)

[5]

Razavi B., Multi-decade carrier generation for cognitive radios, Proc. Symp. VLSI Circuits, pp. 120-121, (2009)

[6]

Elabd S., Balasubramanian S., Wu Q., Quach T., Mattamana A., Khalil W., Analytical and experimental study of wide tuning range mm-wave CMOS LC-VCOs, IEEE Trans. Circuits Syst. I, Reg. Papers, 61, 5, pp. 1343-1354, (2014)

[7]

Kashani M.H., Tarkeshdouz A., Molavi R., Sheikholeslami A., Afshari E., Mirabbasi S., On the design of a high-performance mm-wave VCO with switchable triple-coupled transformer, IEEE Trans. Microw. Theory Techn, 67, 11, pp. 4450-4464, (2019)

[8]

Qin P., Xue Q., Che W., Microwave LC oscillators: Multimode switching techniques, IEEE Microw. Mag, 24, 4, pp. 63-81, (2023)

[9]

Sadhu B., Kim J., Harjani R., A CMOS 3.3-8.4 GHz wide tuning range, low phase noise LC VCO, Proc. IEEE Custom Integr. Circuits Conf., pp. 559-562, (2009)

[10]

Fei W., Yu H., Fu H., Ren J., Yeo K.S., Design and analysis of wide frequency-tuning-range CMOS 60 GHz VCO by switching inductor loaded transformer, IEEE Trans. Circuits Syst. I, Reg. Papers, 61, 3, pp. 699-711, (2014)

← 1 2 3 →