Junction Temperature Extraction Methods for Si and SiC Power Devices-a Review and Possible Alternatives

被引：0
|
作者：
Wang L. [1 ]
Deng J. [1 ]
Yang J. [1 ]
Li W. [2 ]
机构：
[1] School of Automation Science and Electrical Engineering, Beihang University, Beijing
[2] College of Electrical Engineering, Zhejiang University, Hangzhou
来源：
Diangong Jishu Xuebao/Transactions of China Electrotechnical Society | 2019年 / 34卷 / 04期
关键词：
Junction temperature extraction; Power semiconductor devices; Si; SiC; Temperature sensitive parameters;
D O I：
10.19595/j.cnki.1000-6753.tces.180296
中图分类号：
学科分类号：
摘要：
Accurate online extraction of junction temperature for power semiconductor devices is essential for intelligent switching control, performance evaluation, active thermal management, health assessment and device lifetime optimization. The main contribution of this paper is to thoroughly review the extraction theory and main features of the existing junction temperature extraction methods for Si and SiC devices. Furthermore, these methods were evaluated and compared from the criteria of sensitivity, measuring frequency, virulence and linearity. Then, together with the investigation of temperature characteristics of SiC JFET devices, a novel non-invasive junction temperature extraction method was proposed based on the gate reverse breakdown voltage of SiC JFET devices. The simulation results verified the correctness and effectiveness of the proposed method. © 2019, Electrical Technology Press Co. Ltd. All right reserved.
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页码：703 / 716
页数：13
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