GaSb-based type-Ⅰ quantum well cascade diode lasers emitting at nearly 2-μm wavelength with digitally grown AlGaAsSb gradient layers

被引：0

作者：

张一 ^{[1
,2
]}

杨成奥 ^{[1
,2
]}

尚金铭 ^{[1
,2
]}

陈益航 ^{[1
,2
]}

王天放 ^{[1
,2
]}

张宇 ^{[1
,2
]}

徐应强 ^{[1
,2
]}

刘冰 ^{[3
]}

牛智川 ^{[1
,2
,3
]}

机构：

[1] State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductor,Chinese Academy of Sciences

[2] College of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences

[3] Beijing Academy of Quantum Information Sciences

来源：

Chinese Physics B | 2021年 / 30卷 / 09期

关键词：

D O I：

暂无

中图分类号：

TN248 [激光器];

学科分类号：

0803 ; 080401 ; 080901 ;

摘要：

We report a Ga Sb-based type-I quantum well cascade diode laser emitting at nearly 2-μm wavelength. The recycling of carriers is realized by the gradient Al Ga As Sb barrier and chirped Ga Sb/Al Sb/In As electron injector. The growth of quaternary digital alloy with a gradually changed composition by short-period superlattices is introduced in detail in this paper. And the quantum well cascade laser with 100-μm-wide, 2-mm-long ridge generates an about continuous-wave output of 0.8 W at room temperature. The characteristic temperature T0 is estimated at above 60 K.

引用

页码：161 / 164

页数：4

共 12 条

[1]

1 μm InGaSb quantum well lasers exhibiting the maximum conversion efficiency of 27.5% with digitally grown AlGaAsSb barriers and gradient layers[J] . Shengwen Xie,Chengao Yang,ShuShan Huang,Ye Yuan,Yi zhang,Jinming Shang,Chenyuan Cai,Yu Zhang,Yingqiang Xu,Haiqiao Ni,Zhichuan Niu.Superlattices and Microstructures . 2019

[2]

High power cascade diode lasers emitting near 2-????m[J] . Takashi Hosoda,Tao Feng,Leon Shterengas,Gela Kipshidze,Gregory Belenky.Applied Physics Letters . 2016 (13)

[3]

Cascade type-I quantum well diode lasers emitting 960-??mW near 3-????m[J] . Leon Shterengas,Rui Liang,Gela Kipshidze,Takashi Hosoda,Gregory Belenky,Sherrie S. Bowman,Richard L. Tober.Applied Physics Letters . 2014 (16)

[4] Pulsed and CW performance of 7-stage interband cascade lasers [J].

Canedy, Chadwick L. ;

Abell, Joshua ;

Merritt, Charles D. ;

Bewley, William W. ;

Kim, Chul Soo ;

Kim, Mijin ;

Vurgaftman, Igor ;

Meyer, Jerry R. .

OPTICS EXPRESS, 2014, 22 (07) :7702-7710

[5] Strain analysis of compositionally tailored interfaces in InAs/GaSb superlattices [J].

Mahalingam, Krishnamurthy ;

Haugan, Heather J. ;

Brown, Gail J. ;

Aronow, Andrew J. .

APPLIED PHYSICS LETTERS, 2013, 103 (21)

[6]

Type-I quantum well cascade diode lasers emitting near 3-????m[J] . Leon Shterengas,Rui Liang,Gela Kipshidze,Takashi Hosoda,Sergey Suchalkin,Gregory Belenky.Applied Physics Letters . 2013 (12)

[7]

High-power laterally coupled distributed-feedback GaSb-based diode lasers at 2-????m wavelength[J] . Siamak Forouhar,Ryan M. Briggs,Clifford Frez,Kale J. Franz,Alexander Ksendzov.Applied Physics Letters . 2012 (3)

[8] Rebalancing of internally generated carriers for mid-infrared interband cascade lasers with very low power consumption [J].

Vurgaftman, I. ;

Bewley, W. W. ;

Canedy, C. L. ;

Kim, C. S. ;

Kim, M. ;

Merritt, C. D. ;

Abell, J. ;

Lindle, J. R. ;

Meyer, J. R. .

NATURE COMMUNICATIONS, 2011, 2

[9]

High-Power 2-Diode Lasers With Asymmetric Waveguide[J] . Jianfeng Chen,Gela Kipshidze,Leon Shterengas.IEEE Journal of Quantum Electronics . 2010 (10)

[10]

Room temperature operated 3.1μm type-I GaSb-based diode lasers with 80mW continuous-wave output power[J] . Shterengas L.,Belenky G.,Kipshidze G.,Hosoda T..Applied Physics Letters . 2008 (17)

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