Structures, stabilities, and electronic properties of F-doped Si_n(n= 1~12) clusters: Density functional theory investigation

被引:0
作者
张帅
蒋华龙
王萍
卢成
李根全
张萍
机构
[1] Physics&ElectronicEngineeringCollege,NanyangNormalUniversity
关键词
FSin cluster; density-functional theory; geometrical structures; electronic properties;
D O I
暂无
中图分类号
O641.1 [化学键理论];
学科分类号
070304 ; 081704 ;
摘要
The geometries, stabilities, and electronic properties of FSin(n = 1 ~ 12) clusters are systematically investigated by using first-principles calculations based on the hybrid density-functional theory at the B3LYP/6-311G level. The geometries are found to undergo a structural change from two-dimensional to three-dimensional structure when the cluster size n equals 3. On the basis of the obtained lowest-energy geometries, the size dependencies of cluster properties, such as averaged binding energy, fragmentation energy, second-order energy difference, HOMO–LUMO(highest occupied molecular orbital–lowest unoccupied molecular orbital) gap and chemical hardness, are discussed. In addition, natural population analysis indicates that the F atom in the most stable FSincluster is recorded as being negative and the charges always transfer from Si atoms to the F atom in the FSinclusters.
引用
收藏
页码:234 / 241
页数:8
相关论文
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