Radiation effects of 50-MeV protons on PNP bipolar junction transistors

The effects of radiation on 3 CG110 PNP bipolar junction transistors(BJTs) are characterized using 50-Me V protons,40-Me V Si ions, and 1-Me V electrons. In this paper, electrical characteristics and deep level transient spectroscopy(DLTS)are utilized to analyze radiation defects induced by ionization and displacement damage. The experimental results show a degradation of the current gain and an increase in the types of radiation defect with increasing fluences of 50-Me V protons. Moreover, by comparing the types of damage caused by different radiation sources, the characteristics of the radiation defects induced by irradiation show that 50-Me V proton irradiation can produce both ionization and displacement defects in the 3 CG110 PNP BJTs, in contrast to 40-Me V Si ions, which mainly generate displacement defects, and 1-Me V electrons, which mainly produce ionization defects. This work provides direct evidence of a synergistic effect between the ionization and displacement defects caused in PNP BJTs by 50-Me V protons.