Influence of Surface Structures on Quality of CdTe(100) Thin Films Grown on GaAs(100) Substrates

被引：0

作者：

顾义 ^{[1
,2
,3
]}

郑慧君 ^{[4
]}

陈熙仁 ^{[5
]}

李家明 ^{[2
]}

聂天晓 ^{[6
]}

寇煦丰 ^{[1
,2
]}

机构：

[1] Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences

[2] School of Information Science and Technology, Shanghai Tech University

[3] University of Chinese Academy of Sciences

[4] School of Physical Science and Technology, Shanghai Tech University

[5] Shanghai Institute of Technical Physics, Chinese Academy of Science

[6] Fert Beijing Institute, BDBC, and School of Electronic and Information Engineering, Beihang

来源：

Chinese Physics Letters | 2018年 / 35卷 / 08期

关键词：

D O I：

暂无

中图分类号：

O484 [薄膜物理学];

学科分类号：

080501 ; 1406 ;

摘要：

We report the epitaxial growth of single-crystalline Cd Te(100) thin films on Ga As(100) substrates using molecular beam epitaxy. By controlling the substrate pre-heated temperature with adjustable Te flux, three different reconstructed surfaces are realized, and their influence on the subsequent Cd Te growth is investigated. More importantly, we find that both the presence of a thin native oxide layer and the formation of Ga-As-Te bonds at the interface enable the growth along the(100) orientation and help to reduce the threading dislocations and other defects. Our results provide new opportunities for compound semiconductor heterogeneous growth via interfacial engineering.

引用

页码：66 / 69

页数：4

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