Exploration of high-speed 3.0 THz imaging with a 65 nm CMOS process

This paper describes a promising route for the exploration and development of 3.0 THz sensing and imaging with FET-based power detectors in a standard 65 nm CMOS process. Based on the plasma-wave theory proposed by Dyakonov and Shur, we designed high-responsivity and low-noise multiple detectors for monitoring a pulse-mode 3.0 THz quantum cascade laser（QCL）. Furthermore, we present a fully integrated high-speed 32 × 32-pixel 3.0 THz CMOS image sensor（CIS）. The full CIS measures 2.81 × 5.39 mm2 and achieves a 423 V/W responsivity（Rv） and a 5.3 nW integral noise equivalent power（NEP） at room temperature. In experiments, we demonstrate a testing speed reaching 319 fps under continuous-wave（CW） illumination of a 3.0 THz QCL. The results indicate that our terahertz CIS has excellent potential in cost-effective and commercial THz imaging and material detection.