Absence of metallicity and bias-dependent resistivity in low-carrier-density EuCd2As2

被引:0
|
作者
Yuxiang Wang [1 ]
Jianwen Ma [1 ]
Jian Yuan [2 ]
Wenbin Wu [3 ]
Yong Zhang [4 ]
Yicheng Mou [1 ]
Jiaming Gu [1 ]
Peihong Cheng [2 ]
Wu Shi [1 ,5 ]
Xiang Yuan [3 ,6 ]
Jinglei Zhang [4 ]
Yanfeng Guo [2 ,7 ]
Cheng Zhang [1 ,5 ]
机构
[1] State Key Laboratory of Surface Physics and Institute for Nanoelectronic Devices and Quantum Computing, Fudan University
[2] School of Physical Science and Technology, Shanghai Tech University
[3] State Key Laboratory of Precision Spectroscopy, East China Normal University
[4] Anhui Province Key Laboratory of Condensed Matter Physics at Extreme Conditions, High Magnetic Field Laboratory of the Chinese Academy of Sciences
[5] Zhangjiang Fudan International Innovation Center, Fudan University
[6] School of Physics and Electronic Science, East China Normal University
[7] Shanghai Tech Laboratory for Topological Physics
基金
中国国家自然科学基金; 上海市自然科学基金; 国家重点研发计划;
关键词
D O I
暂无
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
EuCd2As2was theoretically predicted to be a minimal model of Weyl semimetals with a single pair of Weyl points in the ferromagnet state. However, the heavily p-doped Eu Cd2As2crystals in previous experiments prevent direct identification of the semimetal hypothesis. Here, we present a comprehensive magneto-transport study of high-quality Eu Cd2As2crystals with ultralow bulk carrier density(1013cm-3). In contrast to the general expectation of a Weyl semimetal phase, Eu Cd2As2shows insulating behavior in both antiferromagnetic and ferromagnetic states as well as surface-dominated conduction from band bending. Moreover, the application of a dc bias current can dramatically modulate the resistance by over one order of magnitude,and induce a periodic resistance oscillation due to the geometric resonance. Such nonlinear transport results from the high nonequilibrium state induced by an electrical field near the band edge. Our results suggest an insulating phase in Eu Cd2As2and put a strong constraint on the underlying mechanism of anomalous transport properties in this system.
引用
收藏
页码:123 / 129
页数:7
相关论文
共 50 条
  • [31] Conduction properties of β-FeSi2 epitaxial films with low carrier density
    Terai, Yoshikazu
    Suzuki, Nozomu
    Noda, Keiichi
    Fujiwara, Yasufumi
    PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 10, NO 12, 2013, 10 (12): : 1696 - 1698
  • [32] Bias-dependent imaging of the in-terminated InAs(001) (4x2)/c(8x2) surface by STM: Reconstruction and transitional defect
    Kendrick, C
    LeLay, G
    Kahn, A
    PHYSICAL REVIEW B, 1996, 54 (24): : 17877 - 17883
  • [34] Physics-based bias-dependent compact modeling of 1/f noise in single- to few-layer 2D-FETs
    Mavredakis, Nikolaos
    Pacheco-Sanchez, Anibal
    Alam, Md Hasibul
    Guimera-Brunet, Anton
    Martinez, Javier
    Garrido, Jose Antonio
    Akinwande, Deji
    Jimenez, David
    NANOSCALE, 2023, 15 (14) : 6853 - 6863
  • [35] Bias-dependent diffusion of a H2O molecule on metal surfaces by the first-principles method under the grand-canonical ensemble
    Hagiwara, Satoshi
    Hu, Chunping
    Nishihara, Satomichi
    Otani, Minoru
    PHYSICAL REVIEW MATERIALS, 2021, 5 (06):
  • [36] SUPERCONDUCTIVITY IN TLBITE2 . A LOW CARRIER DENSITY (3-5)62 COMPOUND
    HEIN, RA
    SWIGGARD, EM
    PHYSICAL REVIEW LETTERS, 1970, 24 (02) : 53 - &
  • [37] Excitation density dependent carrier dynamics in a monolayer MoS2: Exciton dissociation, formation and bottlenecking
    Khatua, Durga Prasad
    Singh, Asha
    Gurung, Sabina
    Jayabalan, J.
    MICRO AND NANOSTRUCTURES, 2022, 165
  • [38] Investigation of carrier transport properties in semipolar (11(2)over-bar2) GaN films with low defect density
    Jang, Soohwan
    Kim, Hyonwoong
    Kim, Doo Soo
    Hwang, Sung-Min
    Kim, Jihyun
    Baik, Kwang Hyeon
    APPLIED PHYSICS LETTERS, 2013, 103 (16)
  • [39] Characteristics of Tc and ρ(T) of polycrystalline (In2O3)-(ZnO) films with low carrier density
    Shinozaki, B.
    Takada, S.
    Kokubo, N.
    Makise, K.
    Asano, T.
    Yamada, K.
    Yano, K.
    Nakamura, H.
    26TH INTERNATIONAL CONFERENCE ON LOW TEMPERATURE PHYSICS (LT26), PTS 1-5, 2012, 400
  • [40] Hall effect in the low charge-carrier density ferromagnet UCo0.5Sb2
    Tran, VH
    Paschen, S
    Steglich, F
    Troc, R
    Bukowski, Z
    PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 2006, 243 (01): : 94 - 97