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- [1] Absence of metallicity and bias-dependent resistivity in low-carrier-density EuCd2As2SCIENCE CHINA-PHYSICS MECHANICS & ASTRONOMY, 2024, 67 (04)Wang, Yuxiang论文数: 0 引用数: 0 h-index: 0机构: Fudan Univ, State Key Lab Surface Phys, Shanghai 200433, Peoples R China Fudan Univ, Inst Nanoelect Devices & Quantum Comp, Shanghai 200433, Peoples R China Fudan Univ, State Key Lab Surface Phys, Shanghai 200433, Peoples R ChinaMa, Jianwen论文数: 0 引用数: 0 h-index: 0机构: Fudan Univ, State Key Lab Surface Phys, Shanghai 200433, Peoples R China Fudan Univ, Inst Nanoelect Devices & Quantum Comp, Shanghai 200433, Peoples R China Fudan Univ, State Key Lab Surface Phys, Shanghai 200433, Peoples R ChinaYuan, Jian论文数: 0 引用数: 0 h-index: 0机构: ShanghaiTech Univ, Sch Phys Sci & Technol, Shanghai 201210, Peoples R China Fudan Univ, State Key Lab Surface Phys, Shanghai 200433, Peoples R ChinaWu, Wenbin论文数: 0 引用数: 0 h-index: 0机构: East China Normal Univ, State Key Lab Precis Spect, Shanghai 200241, Peoples R China Fudan Univ, State Key Lab Surface Phys, Shanghai 200433, Peoples R ChinaZhang, Yong论文数: 0 引用数: 0 h-index: 0机构: Chinese Acad Sci, Extreme Condit High Magnet Field Lab, Anhui Prov Key Lab Condensed Matter Phys, Hefei 230031, Peoples R China Fudan Univ, State Key Lab Surface Phys, Shanghai 200433, Peoples R ChinaMou, Yicheng论文数: 0 引用数: 0 h-index: 0机构: Fudan Univ, State Key Lab Surface Phys, Shanghai 200433, Peoples R China Fudan Univ, Inst Nanoelect Devices & Quantum Comp, Shanghai 200433, Peoples R China Fudan Univ, State Key Lab Surface Phys, Shanghai 200433, Peoples R ChinaGu, Jiaming论文数: 0 引用数: 0 h-index: 0机构: Fudan Univ, State Key Lab Surface Phys, Shanghai 200433, Peoples R China Fudan Univ, Inst Nanoelect Devices & Quantum Comp, Shanghai 200433, Peoples R China Fudan Univ, State Key Lab Surface Phys, Shanghai 200433, Peoples R ChinaCheng, Peihong论文数: 0 引用数: 0 h-index: 0机构: ShanghaiTech Univ, Sch Phys Sci & Technol, Shanghai 201210, Peoples R China Fudan Univ, State Key Lab Surface Phys, Shanghai 200433, Peoples R ChinaShi, Wu论文数: 0 引用数: 0 h-index: 0机构: Fudan Univ, State Key Lab Surface Phys, Shanghai 200433, Peoples R China Fudan Univ, Inst Nanoelect Devices & Quantum Comp, Shanghai 200433, Peoples R China Fudan Univ, Zhangjiang Fudan Int Innovat Ctr, Shanghai 201210, Peoples R China Fudan Univ, State Key Lab Surface Phys, Shanghai 200433, Peoples R ChinaYuan, Xiang论文数: 0 引用数: 0 h-index: 0机构: East China Normal Univ, State Key Lab Precis Spect, Shanghai 200241, Peoples R China East China Normal Univ, Sch Phys & Elect Sci, Shanghai 200241, Peoples R China Fudan Univ, State Key Lab Surface Phys, Shanghai 200433, Peoples R ChinaZhang, Jinglei论文数: 0 引用数: 0 h-index: 0机构: Chinese Acad Sci, Extreme Condit High Magnet Field Lab, Anhui Prov Key Lab Condensed Matter Phys, Hefei 230031, Peoples R China Fudan Univ, State Key Lab Surface Phys, Shanghai 200433, Peoples R ChinaGuo, Yanfeng论文数: 0 引用数: 0 h-index: 0机构: ShanghaiTech Univ, Sch Phys Sci & Technol, Shanghai 201210, Peoples R China ShanghaiTech Lab Topol Phys, Shanghai 201210, Peoples R China Fudan Univ, State Key Lab Surface Phys, Shanghai 200433, Peoples R ChinaZhang, Cheng论文数: 0 引用数: 0 h-index: 0机构: Fudan Univ, State Key Lab Surface Phys, Shanghai 200433, Peoples R China Fudan Univ, Inst Nanoelect Devices & Quantum Comp, Shanghai 200433, Peoples R China Fudan Univ, Zhangjiang Fudan Int Innovat Ctr, Shanghai 201210, Peoples R China Fudan Univ, State Key Lab Surface Phys, Shanghai 200433, Peoples R China
- [2] Absence of metallicity and bias-dependent resistivity in low-carrier-density EuCd2As2Science China Physics, Mechanics & Astronomy, 2024, 67Yuxiang Wang论文数: 0 引用数: 0 h-index: 0机构: Fudan University,State Key Laboratory of Surface Physics and Institute for Nanoelectronic Devices and Quantum ComputingJianwen Ma论文数: 0 引用数: 0 h-index: 0机构: Fudan University,State Key Laboratory of Surface Physics and Institute for Nanoelectronic Devices and Quantum ComputingJian Yuan论文数: 0 引用数: 0 h-index: 0机构: Fudan University,State Key Laboratory of Surface Physics and Institute for Nanoelectronic Devices and Quantum ComputingWenbin Wu论文数: 0 引用数: 0 h-index: 0机构: Fudan University,State Key Laboratory of Surface Physics and Institute for Nanoelectronic Devices and Quantum ComputingYong Zhang论文数: 0 引用数: 0 h-index: 0机构: Fudan University,State Key Laboratory of Surface Physics and Institute for Nanoelectronic Devices and Quantum ComputingYicheng Mou论文数: 0 引用数: 0 h-index: 0机构: Fudan University,State Key Laboratory of Surface Physics and Institute for Nanoelectronic Devices and Quantum ComputingJiaming Gu论文数: 0 引用数: 0 h-index: 0机构: Fudan University,State Key Laboratory of Surface Physics and Institute for Nanoelectronic Devices and Quantum ComputingPeihong Cheng论文数: 0 引用数: 0 h-index: 0机构: Fudan University,State Key Laboratory of Surface Physics and Institute for Nanoelectronic Devices and Quantum ComputingWu Shi论文数: 0 引用数: 0 h-index: 0机构: Fudan University,State Key Laboratory of Surface Physics and Institute for Nanoelectronic Devices and Quantum ComputingXiang Yuan论文数: 0 引用数: 0 h-index: 0机构: Fudan University,State Key Laboratory of Surface Physics and Institute for Nanoelectronic Devices and Quantum ComputingJinglei Zhang论文数: 0 引用数: 0 h-index: 0机构: Fudan University,State Key Laboratory of Surface Physics and Institute for Nanoelectronic Devices and Quantum ComputingYanfeng Guo论文数: 0 引用数: 0 h-index: 0机构: Fudan University,State Key Laboratory of Surface Physics and Institute for Nanoelectronic Devices and Quantum ComputingCheng Zhang论文数: 0 引用数: 0 h-index: 0机构: Fudan University,State Key Laboratory of Surface Physics and Institute for Nanoelectronic Devices and Quantum Computing
- [3] Intrinsic insulating transport characteristics in low-carrier density EuCd2As2 filmsAPPLIED PHYSICS LETTERS, 2024, 124 (02)Nishihaya, Shinichi论文数: 0 引用数: 0 h-index: 0机构: Tokyo Inst Technol, Dept Phys, Tokyo 1528551, Japan Tokyo Inst Technol, Dept Phys, Tokyo 1528551, JapanNakamura, Ayano论文数: 0 引用数: 0 h-index: 0机构: Tokyo Inst Technol, Dept Phys, Tokyo 1528551, Japan Tokyo Inst Technol, Dept Phys, Tokyo 1528551, Japan论文数: 引用数: h-index:机构:Kriener, Markus论文数: 0 引用数: 0 h-index: 0机构: RIKEN, Ctr Emergent Matter Sci CEMS, Wako 3510198, Japan Tokyo Inst Technol, Dept Phys, Tokyo 1528551, JapanWatanabe, Yuto论文数: 0 引用数: 0 h-index: 0机构: Tokyo Inst Technol, Dept Phys, Tokyo 1528551, Japan Tokyo Inst Technol, Dept Phys, Tokyo 1528551, JapanKawasaki, Masashi论文数: 0 引用数: 0 h-index: 0机构: Univ Tokyo, Dept Appl Phys, Tokyo 1138656, Japan Univ Tokyo, Quantum Phase Elect Ctr QPEC, Tokyo 1138656, Japan Tokyo Inst Technol, Dept Phys, Tokyo 1528551, Japan论文数: 引用数: h-index:机构:
- [4] Ultrafast carrier dynamics in the candidate magnetic Weyl semimetal EuCd2As22020 CONFERENCE ON LASERS AND ELECTRO-OPTICS (CLEO), 2020,O'Neal, Kenneth R.论文数: 0 引用数: 0 h-index: 0机构: Los Alamos Natl Lab, Ctr Integrated Nanotechnol, Los Alamos, NM 87545 USA Los Alamos Natl Lab, Ctr Integrated Nanotechnol, Los Alamos, NM 87545 USAMix, LaMoyne T.论文数: 0 引用数: 0 h-index: 0机构: Los Alamos Natl Lab, Ctr Integrated Nanotechnol, Los Alamos, NM 87545 USA Los Alamos Natl Lab, Ctr Integrated Nanotechnol, Los Alamos, NM 87545 USALee, Min-Cheol论文数: 0 引用数: 0 h-index: 0机构: Los Alamos Natl Lab, Ctr Integrated Nanotechnol, Los Alamos, NM 87545 USA Los Alamos Natl Lab, Ctr Integrated Nanotechnol, Los Alamos, NM 87545 USA论文数: 引用数: h-index:机构:Jo, Na H.论文数: 0 引用数: 0 h-index: 0机构: Iowa State Univ, Ames Lab, Ames, IA 50011 USA Iowa State Univ, Dept Phys & Astron, Ames, IA 50011 USA Los Alamos Natl Lab, Ctr Integrated Nanotechnol, Los Alamos, NM 87545 USABud'ko, Sergey论文数: 0 引用数: 0 h-index: 0机构: Iowa State Univ, Ames Lab, Ames, IA 50011 USA Iowa State Univ, Dept Phys & Astron, Ames, IA 50011 USA Los Alamos Natl Lab, Ctr Integrated Nanotechnol, Los Alamos, NM 87545 USA论文数: 引用数: h-index:机构:Prasankumar, Rohit P.论文数: 0 引用数: 0 h-index: 0机构: Los Alamos Natl Lab, Ctr Integrated Nanotechnol, Los Alamos, NM 87545 USA Los Alamos Natl Lab, Ctr Integrated Nanotechnol, Los Alamos, NM 87545 USAYarotski, Dmitry A.论文数: 0 引用数: 0 h-index: 0机构: Los Alamos Natl Lab, Ctr Integrated Nanotechnol, Los Alamos, NM 87545 USA Los Alamos Natl Lab, Ctr Integrated Nanotechnol, Los Alamos, NM 87545 USA
- [5] Resistivity Reduction of Low-Carrier-Density Sputtered-MoS2 Film using Fluorine Gas2017 17TH INTERNATIONAL WORKSHOP ON JUNCTION TECHNOLOGY (IWJT), 2017, : 44 - 46Okada, Yasunori论文数: 0 引用数: 0 h-index: 0机构: Tokyo Inst Technol, Sch Engn, Midori Ku, 4259 Nagatsuta, Yokohama, Kanagawa 2268502, Japan Tokyo Inst Technol, Sch Engn, Midori Ku, 4259 Nagatsuta, Yokohama, Kanagawa 2268502, JapanYamaguchi, Shimpei论文数: 0 引用数: 0 h-index: 0机构: Tokyo Inst Technol, Sch Engn, Midori Ku, 4259 Nagatsuta, Yokohama, Kanagawa 2268502, Japan Tokyo Inst Technol, Sch Engn, Midori Ku, 4259 Nagatsuta, Yokohama, Kanagawa 2268502, Japan论文数: 引用数: h-index:机构:Muneta, Iriya论文数: 0 引用数: 0 h-index: 0机构: Tokyo Inst Technol, Sch Engn, Midori Ku, 4259 Nagatsuta, Yokohama, Kanagawa 2268502, Japan Tokyo Inst Technol, Sch Engn, Midori Ku, 4259 Nagatsuta, Yokohama, Kanagawa 2268502, JapanKasushima, Kuniyuki论文数: 0 引用数: 0 h-index: 0机构: Tokyo Inst Technol, Sch Engn, Midori Ku, 4259 Nagatsuta, Yokohama, Kanagawa 2268502, Japan Tokyo Inst Technol, Sch Engn, Midori Ku, 4259 Nagatsuta, Yokohama, Kanagawa 2268502, Japan论文数: 引用数: h-index:机构:论文数: 引用数: h-index:机构:
- [6] Emergence of Nontrivial Low-Energy Dirac Fermions in Antiferromagnetic EuCd2As2ADVANCED MATERIALS, 2020, 32 (14)Ma, Junzhang论文数: 0 引用数: 0 h-index: 0机构: Paul Scherrer Inst, Swiss Light Source, CH-5232 Villigen, Switzerland Ecole Polytech Fed Lausanne, Inst Condensed Matter Phys, CH-1015 Lausanne, Switzerland Paul Scherrer Inst, Swiss Light Source, CH-5232 Villigen, SwitzerlandWang, Han论文数: 0 引用数: 0 h-index: 0机构: Rensselaer Polytech Inst, Dept Phys Appl Phys & Astron, Troy, NY 12180 USA Paul Scherrer Inst, Swiss Light Source, CH-5232 Villigen, SwitzerlandNie, Simin论文数: 0 引用数: 0 h-index: 0机构: Stanford Univ, Dept Mat Sci & Engn, Stanford, CA 94305 USA Paul Scherrer Inst, Swiss Light Source, CH-5232 Villigen, SwitzerlandYi, Changjiang论文数: 0 引用数: 0 h-index: 0机构: Chinese Acad Sci, Beijing Natl Lab Condensed Matter Phys, Beijing 100190, Peoples R China Univ Chinese Acad Sci, Sch Phys, Beijing 100190, Peoples R China Paul Scherrer Inst, Swiss Light Source, CH-5232 Villigen, SwitzerlandXu, Yuanfeng论文数: 0 引用数: 0 h-index: 0机构: Chinese Acad Sci, Beijing Natl Lab Condensed Matter Phys, Beijing 100190, Peoples R China Univ Chinese Acad Sci, Sch Phys, Beijing 100190, Peoples R China Paul Scherrer Inst, Swiss Light Source, CH-5232 Villigen, SwitzerlandLi, Hang论文数: 0 引用数: 0 h-index: 0机构: Chinese Acad Sci, Beijing Natl Lab Condensed Matter Phys, Beijing 100190, Peoples R China Univ Chinese Acad Sci, Sch Phys, Beijing 100190, Peoples R China Paul Scherrer Inst, Swiss Light Source, CH-5232 Villigen, SwitzerlandJandke, Jasmin论文数: 0 引用数: 0 h-index: 0机构: Paul Scherrer Inst, Swiss Light Source, CH-5232 Villigen, Switzerland Paul Scherrer Inst, Swiss Light Source, CH-5232 Villigen, SwitzerlandWulfhekel, Wulf论文数: 0 引用数: 0 h-index: 0机构: Karlsruhe Inst Technol, Phys Inst, D-76131 Karlsruhe, Germany Paul Scherrer Inst, Swiss Light Source, CH-5232 Villigen, SwitzerlandHuang, Yaobo论文数: 0 引用数: 0 h-index: 0机构: Chinese Acad Sci, Shanghai Inst Appl Phys, Shanghai Synchrotron Radiat Facil, Shanghai 201204, Peoples R China Paul Scherrer Inst, Swiss Light Source, CH-5232 Villigen, SwitzerlandWest, Damien论文数: 0 引用数: 0 h-index: 0机构: Rensselaer Polytech Inst, Dept Phys Appl Phys & Astron, Troy, NY 12180 USA Paul Scherrer Inst, Swiss Light Source, CH-5232 Villigen, Switzerland论文数: 引用数: h-index:机构:论文数: 引用数: h-index:机构:Strocov, Vladimir N.论文数: 0 引用数: 0 h-index: 0机构: Paul Scherrer Inst, Swiss Light Source, CH-5232 Villigen, Switzerland Paul Scherrer Inst, Swiss Light Source, CH-5232 Villigen, SwitzerlandMesot, Joel论文数: 0 引用数: 0 h-index: 0机构: Paul Scherrer Inst, Swiss Light Source, CH-5232 Villigen, Switzerland Ecole Polytech Fed Lausanne, Inst Condensed Matter Phys, CH-1015 Lausanne, Switzerland Paul Scherrer Inst, Swiss Light Source, CH-5232 Villigen, SwitzerlandWeng, Hongming论文数: 0 引用数: 0 h-index: 0机构: Chinese Acad Sci, Beijing Natl Lab Condensed Matter Phys, Beijing 100190, Peoples R China Songshan Lake Mat Lab Dongguan, Dongguan 523808, Guangdong, Peoples R China Paul Scherrer Inst, Swiss Light Source, CH-5232 Villigen, SwitzerlandZhang, Shengbai论文数: 0 引用数: 0 h-index: 0机构: Rensselaer Polytech Inst, Dept Phys Appl Phys & Astron, Troy, NY 12180 USA Paul Scherrer Inst, Swiss Light Source, CH-5232 Villigen, SwitzerlandShi, Youguo论文数: 0 引用数: 0 h-index: 0机构: Chinese Acad Sci, Beijing Natl Lab Condensed Matter Phys, Beijing 100190, Peoples R China Songshan Lake Mat Lab Dongguan, Dongguan 523808, Guangdong, Peoples R China Paul Scherrer Inst, Swiss Light Source, CH-5232 Villigen, SwitzerlandQian, Tian论文数: 0 引用数: 0 h-index: 0机构: Chinese Acad Sci, Beijing Natl Lab Condensed Matter Phys, Beijing 100190, Peoples R China Songshan Lake Mat Lab Dongguan, Dongguan 523808, Guangdong, Peoples R China Paul Scherrer Inst, Swiss Light Source, CH-5232 Villigen, SwitzerlandShi, Ming论文数: 0 引用数: 0 h-index: 0机构: Paul Scherrer Inst, Swiss Light Source, CH-5232 Villigen, Switzerland Paul Scherrer Inst, Swiss Light Source, CH-5232 Villigen, SwitzerlandDing, Hong论文数: 0 引用数: 0 h-index: 0机构: Chinese Acad Sci, Beijing Natl Lab Condensed Matter Phys, Beijing 100190, Peoples R China Univ Chinese Acad Sci, Sch Phys, Beijing 100190, Peoples R China Songshan Lake Mat Lab Dongguan, Dongguan 523808, Guangdong, Peoples R China Univ Chinese Acad Sci, CAS Ctr Excellence Topol Quantum Computat, Beijing 100190, Peoples R China Paul Scherrer Inst, Swiss Light Source, CH-5232 Villigen, Switzerland
- [7] Absence of Weyl nodes in EuCd 2 As 2 revealed by the carrier density dependence of the anomalous Hall effectPHYSICAL REVIEW B, 2024, 109 (12)Shi, Yue论文数: 0 引用数: 0 h-index: 0机构: Univ Washington, Dept Phys, Seattle, WA 98195 USA Univ Washington, Dept Mat Sci & Engn, Seattle, WA 98195 USA Univ Washington, Dept Phys, Seattle, WA 98195 USALiu, Zhaoyu论文数: 0 引用数: 0 h-index: 0机构: Univ Washington, Dept Phys, Seattle, WA 98195 USA Univ Washington, Dept Phys, Seattle, WA 98195 USABurnett, Logan A.论文数: 0 引用数: 0 h-index: 0机构: Univ Alabama Birmingham, Dept Phys, Birmingham, AL 35294 USA Univ Washington, Dept Phys, Seattle, WA 98195 USALee, Seokhyeong论文数: 0 引用数: 0 h-index: 0机构: Univ Washington, Dept Elect & Comp Engn, Seattle, WA 98195 USA Univ Washington, Dept Phys, Seattle, WA 98195 USAHu, Chaowei论文数: 0 引用数: 0 h-index: 0机构: Univ Washington, Dept Phys, Seattle, WA 98195 USA Univ Washington, Dept Phys, Seattle, WA 98195 USAJiang, Qianni论文数: 0 引用数: 0 h-index: 0机构: Univ Washington, Dept Phys, Seattle, WA 98195 USA Univ Washington, Dept Phys, Seattle, WA 98195 USACai, Jiaqi论文数: 0 引用数: 0 h-index: 0机构: Univ Washington, Dept Phys, Seattle, WA 98195 USA Univ Washington, Dept Phys, Seattle, WA 98195 USAXu, Xiaodong论文数: 0 引用数: 0 h-index: 0机构: Univ Washington, Dept Phys, Seattle, WA 98195 USA Univ Washington, Dept Mat Sci & Engn, Seattle, WA 98195 USA Univ Washington, Dept Phys, Seattle, WA 98195 USALi, Mo论文数: 0 引用数: 0 h-index: 0机构: Univ Washington, Dept Phys, Seattle, WA 98195 USA Univ Washington, Dept Elect & Comp Engn, Seattle, WA 98195 USA Univ Washington, Dept Phys, Seattle, WA 98195 USAChen, Cheng-Chien论文数: 0 引用数: 0 h-index: 0机构: Univ Alabama Birmingham, Dept Phys, Birmingham, AL 35294 USA Univ Washington, Dept Phys, Seattle, WA 98195 USAChu, Jiun-Haw论文数: 0 引用数: 0 h-index: 0机构: Univ Washington, Dept Phys, Seattle, WA 98195 USA Univ Washington, Dept Phys, Seattle, WA 98195 USA
- [8] BIAS-DEPENDENT STM IMAGES OF CHARGE-DENSITY WAVES ON TAS2PHYSICAL REVIEW B, 1994, 50 (19): : 14746 - 14749HAN, WH论文数: 0 引用数: 0 h-index: 0机构: OHIO UNIV,DEPT PHYS & ASTRON,CONDENSED MATTER & SURFACE SCI PROGRAM,ATHENS,OH 45701HUNT, ER论文数: 0 引用数: 0 h-index: 0机构: OHIO UNIV,DEPT PHYS & ASTRON,CONDENSED MATTER & SURFACE SCI PROGRAM,ATHENS,OH 45701PANKRATOV, O论文数: 0 引用数: 0 h-index: 0机构: OHIO UNIV,DEPT PHYS & ASTRON,CONDENSED MATTER & SURFACE SCI PROGRAM,ATHENS,OH 45701FRINDT, RF论文数: 0 引用数: 0 h-index: 0机构: OHIO UNIV,DEPT PHYS & ASTRON,CONDENSED MATTER & SURFACE SCI PROGRAM,ATHENS,OH 45701
- [9] Low-Carrier-Density Sputtered MoS2 Film by Vapor-Phase SulfurizationJournal of Electronic Materials, 2018, 47 : 3497 - 3501Kentaro Matsuura论文数: 0 引用数: 0 h-index: 0机构: Tokyo Institute of Technology,Takumi Ohashi论文数: 0 引用数: 0 h-index: 0机构: Tokyo Institute of Technology,Iriya Muneta论文数: 0 引用数: 0 h-index: 0机构: Tokyo Institute of Technology,Seiya Ishihara论文数: 0 引用数: 0 h-index: 0机构: Tokyo Institute of Technology,Kuniyuki Kakushima论文数: 0 引用数: 0 h-index: 0机构: Tokyo Institute of Technology,Kazuo Tsutsui论文数: 0 引用数: 0 h-index: 0机构: Tokyo Institute of Technology,Atsushi Ogura论文数: 0 引用数: 0 h-index: 0机构: Tokyo Institute of Technology,Hitoshi Wakabayashi论文数: 0 引用数: 0 h-index: 0机构: Tokyo Institute of Technology,
- [10] Low-Carrier-Density Sputtered MoS2 Film by Vapor-Phase SulfurizationJOURNAL OF ELECTRONIC MATERIALS, 2018, 47 (07) : 3497 - 3501Matsuura, Kentaro论文数: 0 引用数: 0 h-index: 0机构: Tokyo Inst Technol, Yokohama, Kanagawa 2268502, Japan Tokyo Inst Technol, Yokohama, Kanagawa 2268502, Japan论文数: 引用数: h-index:机构:Muneta, Iriya论文数: 0 引用数: 0 h-index: 0机构: Tokyo Inst Technol, Yokohama, Kanagawa 2268502, Japan Tokyo Inst Technol, Yokohama, Kanagawa 2268502, JapanIshihara, Seiya论文数: 0 引用数: 0 h-index: 0机构: Meiji Univ, Kawasaki, Kanagawa 2145871, Japan Tokyo Inst Technol, Yokohama, Kanagawa 2268502, Japan论文数: 引用数: h-index:机构:论文数: 引用数: h-index:机构:论文数: 引用数: h-index:机构:论文数: 引用数: h-index:机构: