First-principles study on pressure-induced superconductivity and structural design on transition metal diborides

被引:0
|
作者
Zhou, Chao [1 ]
Yu, Hongyu [1 ]
Zhang, Zihan [1 ]
Yu, Zekun [1 ]
Zhu, Jinming [1 ]
Bao, Kuo [1 ]
Cui, Tian [1 ,2 ]
机构
[1] Jilin Univ, Coll Phys, State Key Lab Superhard Mat, Changchun 130012, Peoples R China
[2] Ningbo Univ, Inst High Pressure Phys, Sch Phys Sci & Technol, Ningbo 315211, Peoples R China
基金
国家重点研发计划; 中国国家自然科学基金;
关键词
TEMPERATURE; ELECTRONS; RANGE; ZRB2; WB2;
D O I
10.1063/5.0225610
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Recent experiments on alpha-MoB2 with MgB2-type structure achieved superconductivity at similar to 32 K under 90 GPa, the highest among transition-metal diborides, rekindling interest in their superconducting properties. Our study systematically investigates the band structures of AlB2-type transition metal diborides. We found that the superior superconductivity of MoB2, WB2, and TcB2 correlates with their von Hove singularities near the Fermi level (EF), potentially linked to electron-phonon coupling. These three diborides exhibit similar critical temperature (Tc) trends under pressure: rising initially, peaking around 60 GPa, and then declining. While unstable at ambient pressure, their thermodynamic and dynamical stability limits vary significantly, possibly explaining experimental discrepancies. To stabilize MoB2 at ambient pressure, we designed MoXB4 compounds (X = other transition metals) by substituting every other Mo layer in MoB2 with an X layer. This modification aims to stabilize the structure and enhance superconductivity by reducing d-electron concentration at EF. This principle extends to other potential superconducting diborides, such as WB2 and TcB2. Using Nb as an example, we found that Nb atoms in AlB2-type MoNbB4 may exhibit random occupancy, potentially explaining disparities between theoretical predictions and experimental results. Our study offers valuable insights into superconductivity in transition metal diborides, paving the way for future research and applications.
引用
收藏
页数:10
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