Mo modulating the structure of monoclinic vanadium dioxide boosting the aqueous ammonium-ion storage for high-performance supercapacitor

被引:6
|
作者
Zhou, Zhenhua [1 ]
Lv, Tianming [1 ]
Gao, Zhanming [1 ]
Chen, Dongzhi [2 ]
Jiang, Hanmei [3 ]
Meng, Changgong [1 ]
Zhang, Yifu [1 ,4 ]
机构
[1] Dalian Univ Technol, Sch Chem, State Key Lab Fine Chem, Dalian 116024, Peoples R China
[2] Wuhan Text Univ, State Key Lab New Text Mat & Adv Proc Technol, Wuhan 430073, Peoples R China
[3] Hubei Normal Univ, Coll Chem & Chem Engn, Hubei Key Lab Pollutant Anal & Reuse Technol, Huangshi 435002, Peoples R China
[4] Hubei Univ Sci & Technol, Sch Nucl Technol & Chem & Biol, Hubei Key Lab Radiat Chem & Funct Mat, Xianning 437100, Peoples R China
基金
中国国家自然科学基金;
关键词
Molybdenum; Doping; Ammonium-ion storage; Electrochemical properties; Supercapacitors; VO2(B); ENERGY-STORAGE; DENSITY; NH4+;
D O I
10.1016/j.jcis.2024.07.158
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Supercapacitors (SCs) using ammonium-ion (NH4+) as the charge carrier (NH4+-SCs) have attracted continuous attention and vanadium-based materials are proved to have high-efficient NH4+-storage properties. Monoclinic vanadium dioxide, VO2(B), as an anode material applied to SCs has been rarely reported and modulating its electronic structure for boosted NH4+-storage is full of challenge. In this work, molybdenum-doped VO2(B) (Modoped VO2(B)) is designed and synthesize to enhance its NH4+-storage. The introduction of Mo atom into the crystal structure of VO2(B) can modulate its crystal structure and bring in some defects. Experimental results manifest that Mo-doped VO2(B) with 2 % Mo-doping shows the best electrochemical properties. Mo-doped VO2(B) achieves the specific capacitance of 1403 F g- 1 (390 mAh g- 1) at 0.1 A g- 1 and the capacitance retention of about 98% after 5000 cycle, superior to that of VO2(B) (893 F g- 1, 248 mAh g- 1 at 0.1 A g- 1 and 60 % capacitance retention. The hybrid supercapacitor (HSC) assembled by Mo-doped VO2(B) and active carbon
引用
收藏
页码:947 / 958
页数:12
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