Reversible modulations of insulator-metal transition in an epitaxial VO2 film through thermal crystallization and femtosecond laser-induced-amorphization of capping Ge2Sb2Te5 layer

We demonstrate reversible modulation of an insulator-metal transition (IMT) of a VO2 film grown on an Al2O3 (001) substrate through crystallization and re-amorphization of a chalcogenide germanium-antimony-telluride (Ge2Sb2Te5: GST) capping layer. After succeeding in the negative shift of IMT temperature (T-r) of the VO2 film through the crystallization of the GST layer accompanied by volume reduction, we performed re-amorphization of the crystalline GST by femtosecond laser irradiation. Under the optimized conditions of laser irradiation considering the penetration depth, re-amorphization of the GST layer was fully achieved, resulting in the shift-back of T-r toward a high-temperature side. Such a reversal of IMT through the crystallization and re-amorphization of the capping GST layer was demonstrated over two cycles. It was suggested that capping GST effectively induces interfacial strain modifications in the VO2 film underneath. Although the shifts in the IMT are still small, reversible modulation of IMT shown here will be beneficial for applications of VO2 films with controllable IMT. (C) 2024 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution (CC BY) license (https://creativecommons.org/licenses/by/4.0/).