Resonance-induced anomalies in temperature-dependent Raman scattering of PdSe2

被引:0
作者
Abdul-Aziz, Omar [1 ]
Wolverson, Daniel [2 ]
Sayers, Charles J. [3 ]
Carpene, Ettore [4 ]
Parmigiani, Fulvio [5 ]
Hedayat, Hamoon [1 ]
van Loosdrecht, Paul H. M. [1 ]
机构
[1] Univ Cologne, Phys Inst 2, Zulpicher Str 77, D-50937 Cologne, Germany
[2] Univ Bath, Ctr Nanosci & Nanotechnol, Dept Phys, Bath BA2 7AY, England
[3] Politecn Milan, Dipartimento Fis, I-20133 Milan, Italy
[4] Politecn Milan, CNR IFN, Dipartimento Fis, I-20133 Milan, Italy
[5] Univ Trieste, Dipartimento Fis, Via A Valerio 2, I-34127 Trieste, Italy
基金
欧盟地平线“2020”;
关键词
TRANSITION; SPECTROSCOPY; MONOLAYERS; PHONONS; WS2;
D O I
10.1039/d4tc02012j
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We report a comprehensive Raman study of the phonon behavior in PdSe2 in the temperature range of 5 K to 300 K. A remarkable change in the Raman spectrum is observed at 120 K: a significant enhancement of the out-of-plane phonon A(g)(1) mode, accompanied by a suppression of the in-plane A(g)(2) and B-1g(2) modes. This intriguing behavior is attributed to a temperature-dependent resonant excitation effect. The results are supported by density functional theory (DFT) calculations, which demonstrate that the electron-phonon coupling for the phonon modes varies and is strongly associated with the relevant electronic states. Furthermore, nonlinear frequency shifts are identified in all modes, indicating the decay of an optical phonon into multiple acoustic phonons. The study of Raman emission reported here, complemented by linear optical spectroscopy, reveals an unexpected scenario for the vibrational properties of PdSe2 that holds substantial promise for future applications in PdSe2-based optoelectronics.
引用
收藏
页码:11402 / 11411
页数:10
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