Transfer-free graphene synthesis on insulating substrates via agglomeration phenomena of catalytic nickel films

被引：34

作者：

Banno, Kazuya ^{[1
,2
]}

Mizuno, Masaya ^{[1
,2
]}

Fujita, Kazuhisa ^{[1
]}

Kubo, Toshiharu ^{[1
]}

Miyoshi, Makoto ^{[1
]}

Egawa, Takashi ^{[1
]}

Soga, Tetsuo ^{[2
]}

机构：

[1] Nagoya Inst Technol, Res Ctr Nano Device & Syst, Nagoya, Aichi 4668555, Japan

[2] Nagoya Inst Technol, Dept Frontier Mat, Nagoya, Aichi 4668555, Japan

来源：

APPLIED PHYSICS LETTERS | 2013年 / 103卷 / 08期

关键词：

CHEMICAL-VAPOR-DEPOSITION; TRANSISTORS; CARBON; LAYERS;

D O I：

10.1063/1.4818342

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Graphene layers were synthesized by annealing amorphous carbon (a-C) thin films on Ni/SiO2/Si(111) substrates grown using pulse arc plasma deposition. Although the graphene layers were formed by catalytic reaction between a-C films and Ni metals, they were observed to be directly on the insulating SiO2/Si substrates with island-shaped metallic particles. These particles presumably resulted from agglomeration phenomena of thin Ni films at a high temperature. We speculated that the agglomeration phenomena allowed the graphene formation on SiO2/Si substrates. It was also confirmed that the particle size and graphene layer thickness depend on the starting Ni thickness. (C) 2013 AIP Publishing LLC.

引用

页数：4

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