A new low-loss SrLaMgTaO6 microwave dielectric ceramic with cubic structure

被引:2
|
作者
Liu, Wei [1 ]
Peng, Sen [1 ]
Li, Yingxiang [1 ]
Pang, Xianying [4 ]
Liang, Deyin [1 ]
Zhang, Xing [2 ]
Tang, Bin [3 ]
Fang, Zixuan [3 ]
Shi, Zitao [3 ]
Chen, Jingjing [3 ]
He, Chuansheng [1 ]
Hou, Zegui [1 ]
Xue, Yan [5 ]
机构
[1] Shaoyang Univ, Coll Informat Engn, Shaoyang 422000, Peoples R China
[2] Chengdu Univ Informat Technol, Coll Optoelect Engn, Sichuan Prov Key Lab Informat Mat & Devices Applic, Chengdu 610225, Peoples R China
[3] Univ Elect Sci & Technol China, State Key Lab Elect Thin Films & Integrated Device, Chengdu 611731, Peoples R China
[4] Southwest Jiaotong Univ, Hope Coll, Chengdu 610000, Peoples R China
[5] Shenzhen Polytech, Sch Elect & Commun Engn, Shenzhen 518055, Peoples R China
基金
中国国家自然科学基金;
关键词
CRYSTAL-STRUCTURE; CHEMICAL-BOND; SPECTRA;
D O I
10.1007/s10854-024-13515-2
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
This study delves into the microwave dielectric properties of SrLaMgTaO6 ceramics synthesized via traditional solid-state methods. Precise lattice parameters observed at the optimal temperature were as follows: a = b = c = 7.97327 & Aring;, with a corresponding unit volume of V = 506.884775 & Aring;(3). Utilizing X-ray diffraction (XRD) patterns and detailed Rietveld refinement analysis at various temperatures revealed that SrLaMgTaO6 ceramics possess a cubic structure, specifically within the Fm-3 m (225) space group. The structure of ceramic particles was further studied by scanning electron microscopy ( SEM), and it was found that the optimum relative density was 95.7%. Additionally, within SrLaMgTaO6 ceramic samples, the study explored the relationship between relative density, porosity, filler fraction, and microwave performance. A significant finding was the impact of the Ta-O bond valence (VTa-O) on the frequency temperature coefficient. At 1480 degrees C, SrLaMgTaO6 ceramics demonstrated superior performance metrics: a dielectric constant (epsilon(r)) of 21.68, a quality factor (Q x f) of 16,739 GHz (f = 8.74 GHz), and a frequency temperature coefficient (tau(f)) of -79.1 ppm/degrees C. The findings highlight the material's potential as a robust dielectric in microwave applications.
引用
收藏
页数:8
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