Spin-canting-driven triple coupling of spin, electric, and valley polarization in two-dimensional antiferromagnetic semiconductors

被引:0
|
作者
Liu, Chao [1 ]
Zhao, Guo-dong [2 ]
Picozzi, Silvia [3 ]
Li, Xingxing [1 ,4 ,5 ]
Yang, Jinlong [1 ,4 ,5 ]
机构
[1] Univ Sci & Technol China, Hefei Natl Res Ctr Phys Sci Microscale, Hefei 230026, Anhui, Peoples R China
[2] Fudan Univ, Sch Microelect, Shanghai 200433, Peoples R China
[3] Univ G DAnnunzio, Consiglio Nazl Ric CNR SPIN, Unity Ric Presso Terzo Chieti, I-66100 Chieti, Italy
[4] Univ Sci & Technol China, Hefei Natl Lab, Hefei 230088, Anhui, Peoples R China
[5] Univ Sci & Technol China, Key Lab Precis & Intelligent Chem, Hefei 230026, Anhui, Peoples R China
基金
中国国家自然科学基金;
关键词
Acknowledgments. This work was supported by the National Natural Science Foundation of China (Grants No. 22288201; No; 22273092; and No. 22322304); by the Innovation Program for Quantum Science and Technology (Grant No. 2021ZD0303306); by the Strategic Priority Research Program of the Chinese Academy of Sciences (Grant No. XDB0450101); by the project funded by the China Postdoctoral Science Foundation with Grants No. 2024M753079 and No. 2024T170873; by USTC Tang Scholar; and by the Postdoctoral Fellowship Program of CPSF;
D O I
10.1103/PhysRevB.110.094409
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Antiferromagnets have aroused widespread interest in spintronics due to negligible stray field and ultrafast spin dynamics. However, antiferromagnets are usually difficult to exhibit the versatile functional properties featured by ferromagnetic materials, particularly the multiple coupling effect among spin, charge, and orbital. Here, based on first-principles calculations, we propose that by exploiting magnetic-field-induced spin canting, the triple coupling of spin, electric, and valley polarization in antiferromagnetic semiconductors can be easily achieved. Taking the two-dimensional (2D) antiferromagnetic semiconductors MnPS3 3 and MnPSe3 3 as examples, we demonstrate the occurrence of ferroelectricity and magnetization driven by different canted-antiferromagnetic orders, and their controllability by both electric and magnetic fields. Remarkably, spin canting further results in bipolar magnetic semiconductor properties with reversible spin polarization and valley polarization in valence and conduction bands. Moreover, we illustrate that such spin-driven multiferroics is derived from the subtle interaction of lattice and spin order. This work paves the way to explore magnetoelectric coupling and valley polarization in 2D antiferromagnetic semiconductors.
引用
收藏
页数:7
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