Interfacial Bridging Enables High Performance Perovskite Solar Cells with Fill Factor Over 85%

被引:5
|
作者
Wang, Yanyan [1 ]
Wang, Yaxin [1 ]
Deng, Liangliang [1 ]
Li, Xiaoguo [1 ]
Zhang, Xin [1 ]
Wang, Haoliang [1 ]
Li, Chongyuan [1 ]
Shi, Zejiao [1 ]
Hu, Tianxiang [1 ]
Liu, Kai [1 ]
Barriguete, Jesus [1 ]
Guo, Tonghui [2 ]
Liu, Yiting [3 ]
Zhang, Xiaolei [3 ]
Hu, Ziyang [4 ]
Zhang, Jia [5 ]
Yu, Anran [1 ]
Zhan, Yiqiang [1 ,5 ]
机构
[1] Fudan Univ, Ctr Micronano Syst, Sch Informat Sci & Technol, Shanghai 200438, Peoples R China
[2] Wuhan Univ, Inst Technol Sci, Wuhan 430072, Peoples R China
[3] East China Normal Univ, State Key Lab Precis Spect, Shanghai 200241, Peoples R China
[4] Ningbo Univ, Sch Phys Sci & Technol, Dept Microelect Sci & Engn, Ningbo 315211, Peoples R China
[5] Fudan Univ, Inst Optoelect, State Key Lab Photovolta Sci & Technol, Shanghai 200438, Peoples R China
基金
中国国家自然科学基金;
关键词
buried interface; FF; graphene quantum dots; perovskite solar cells; EFFICIENT; SNO2; TRANSPORT; BANDGAP;
D O I
10.1002/aenm.202402066
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
The power conversion efficiency (PCE) of perovskite solar cells (PSCs) is approaching their Shockley-Queisser (S-Q) limit through numerous efforts in key parameters improvement. To further approaching the limit, it is important to facilitate the fill factor (FF), a parameter closely related to carrier transport and nonradiative recombination. Herein, an interfacial bridging strategy is proposed to improve FF, which utilizes functional graphene quantum dots at the tin oxide (SnO2)/perovskite buried interface. As a result, synergistic effects of enhanced conductivity of SnO2, preferable energy alignment at the buried interface and improved perovskite crystal orientation are realized. The champion FF reaches 85.24% in formamidinium lead iodide (FAPbI3) based PSCs, which ranks among the highest in the n-i-p structure. Such strategy is also proven successful in other perovskite systems, where the champion PCE reaches 24.86% in the formamidinium-cesium (FACs)-based devices and 24.44% in the flexible devices. Therefore, this work provides a practical design rule for pursuing high FF of PSCs with carbon materials. An facile interfacial bridging strategy by using functional graphene quantum dots to comprehensively solve SnO2/perovskite buried interface issues. The champion FF reaches 85.24% by synergistic effects of enhanced conductivity of SnO2, preferable energy alignment at the buried interface and improved perovskite crystal orientation. The champion PCE reaches 24.86% in the FACs-based devices and 24.44% in the flexible devices. image
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页数:12
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