Field p-Channel Transistors Based on GaN/AlN/GaN Heterostructures on a Silicon Substrate

被引：2

作者：

Zhuravlev, M. N. ^{[1
]}

Egorkin, V. I. ^{[1
]}

机构：

[1] Natl Res Univ Elect Technol, Zelenograd 124498, Moscow, Russia

来源：

SEMICONDUCTORS | 2024年 / 58卷 / 05期

关键词：

AlN/GaN heterostructure; two-dimensional hole gas; p-channel transistor; polarization; OHMIC CONTACTS; GAN; ALN/GAN; POLARIZATION; PERFORMANCE; CARBON; LAYERS; HEMTS;

D O I：

10.1134/S1063782624050178

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Various types of p-channel field-effect transistors based on GaN/AlN/GaN heterostructures are considered. The channel is formed by a polarization-induced two-dimensional hole gas. It is shown that the highest values of saturation current and transconductance are observed in a transistor with a gate formed by a two-dimensional electron gas from the side of the substrate.

引用

页码：479 / 484

页数：6

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