Field p-Channel Transistors Based on GaN/AlN/GaN Heterostructures on a Silicon Substrate

被引：2
|
作者：
Zhuravlev, M. N. [1 ]
Egorkin, V. I. [1 ]
机构：
[1] Natl Res Univ Elect Technol, Zelenograd 124498, Moscow, Russia
来源：
SEMICONDUCTORS | 2024年 / 58卷 / 05期
关键词：
AlN/GaN heterostructure; two-dimensional hole gas; p-channel transistor; polarization; OHMIC CONTACTS; GAN; ALN/GAN; POLARIZATION; PERFORMANCE; CARBON; LAYERS; HEMTS;
D O I：
10.1134/S1063782624050178
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
Various types of p-channel field-effect transistors based on GaN/AlN/GaN heterostructures are considered. The channel is formed by a polarization-induced two-dimensional hole gas. It is shown that the highest values of saturation current and transconductance are observed in a transistor with a gate formed by a two-dimensional electron gas from the side of the substrate.
引用
收藏
页码：479 / 484
页数：6
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