Total Ionizing Dose Effects on a CDTI-Based CCD-on-CMOS Through Buildup of Interface Traps and Oxide Charges

被引：1

作者：

Alj, Antoine Salih ^{[1
,2
,3
]}

Touron, Pierre ^{[4
]}

Roy, Francois ^{[4
]}

Demiguel, Stephane ^{[5
]}

Michelot, Julien ^{[6
]}

Lalucaa, Valerian ^{[2
]}

Virmontois, Cedric ^{[2
]}

Magnan, Pierre ^{[1
]}

Goiffon, Vincent ^{[1
]}

机构：

[1] ISAE SUPAERO, F-31400 Toulouse, France

[2] Ctr Natl Etud Spatiales CNES, F-31400 Toulouse, France

[3] Thales Alenia Space, F-06150 Cannes, France

[4] STMicroelectronics, F-38920 Crolles, France

[5] Thales Alenia Space, F-06150 Cannes, France

[6] Pyxalis, F-38430 Moirans, France

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 2024年 / 71卷 / 08期

关键词：

Electric potential; Charge transfer; Logic gates; Dark current; Charge coupled devices; CMOS image sensors; Electron traps; Capacitive deep trench isolation (CDTI); charge coupled device (CCD); charge transfer inefficiency (CTI); CMOS image sensor (CIS); dark current; full well charge (FWC); interface states; oxide traps; total ionizing dose (TID); DARK CURRENT; CAPACITIVE TRENCH; MOS; MOSFETS; BIAS;

D O I：

10.1109/TNS.2024.3358381

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Total ionizing dose (TID) effects are explored in a fully depleted n-type CCD-on-CMOS based on capacitive deep trench isolation (CDTI). The root cause of the observed degradation on full well charge (FWC), charge transfer efficiency (CTE), and dark current is investigated by discriminating the role of interface states and oxide traps. Biasing conditions on irradiation and long-term annealing are explored to provide more elements of comparison with the state of the art of TID effects on modern CMOS devices.

引用

页码：1774 / 1782

页数：9

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