Design of Silicon Core Coaxial TSVs to Reduce Crosstalk Effects for 3D IC Applications

被引:1
|
作者
Pal, Krishna [1 ]
Halavar, Bheemappa [2 ]
Kumar, V. Ramesh [1 ]
机构
[1] Indian Inst Informat Technol, Elect & Commun Engn, Sri City 517646, Andhra Pradesh, India
[2] Indian Inst Informat Technol, Comp Sci & Engn, Sri City 517646, Andhra Pradesh, India
关键词
Crosstalk; Electrical characterization; Equivalent circuit model; Integrated circuits; Polymer liners; Through silicon VIAs; THROUGH-SILICON; SI;
D O I
10.1080/03772063.2024.2385720
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
This paper presents the effectiveness of the copper (Cu)-based coaxial through silicon vias (CTSVs) to reduce crosstalk noise and propagation delay. In the proposed CTSVs, the polymer liners are used as insulating material which cancels the crosstalk functional failures. The impacts of the proposed CTSVs on the electrical performance are noticed for different parameters and properties of the material. Simulations of the proposed CTSVs are executed using the standard HSPICE and SYMICAD tools. The results indicated that the effects of crosstalk are reduced using the polymer liners instead of silicon dioxide (SiO2) liners in the proposed CTSVs. The electrical performances of the proposed CTSVs are investigated for various thicknesses of Cu and BCB. Furthermore, a comparative study has been carried out for the SiO2 and benzocyclobutene (BCB) liners. It is observed that BCB liner-based CTSVs crosstalk noise and delay values are reduced by up to 25.06% and 27.8% compared to the SiO2 liner-based TSVs.
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页数:7
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