Spin and charge dynamics of doped one-dimensional Mott insulators

被引:0
作者
Tohyama, Takami [1 ]
Maeda, Hiroki [1 ]
Tsutsui, Kenji [2 ]
Sota, Shigetoshi [3 ,4 ]
Yunoki, Seiji [3 ,4 ,5 ,6 ]
机构
[1] Tokyo Univ Sci, Dept Appl Phys, Katsushika, Tokyo 1258585, Japan
[2] Natl Inst Quantum & Radiol Sci & Technol, Synchrotron Radiat Res Ctr, Hyogo 6795148, Japan
[3] RIKEN Ctr Comp Sci R CCS, Computat Mat Sci Res Team, Kobe, Hyogo 6500047, Japan
[4] RIKEN Ctr Quantum Comp RQC, Quantum Comp Sci Res Team, Wako, Saitama 3510198, Japan
[5] RIKEN, Ctr Emergent Matter Sci CEMS, Comp Quantum Matter Res Team, Wako, Saitama 3510198, Japan
[6] RIKEN Cluster Pioneering Res CPR, Comp Condensed Matter Phys Lab, Saitama 3510198, Japan
基金
日本学术振兴会;
关键词
NEAR-NEIGHBOR ATTRACTION; SEPARATION;
D O I
10.1103/PhysRevB.110.125106
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Recent angle-resolved photoemission spectroscopy (ARPES) for a newly discovered doped one-dimensional (1D) Mott insulator Ba2-xSrxCuO3+sproposed the presence of attractive charge interactions between neighboring sites if a 1D Hubbard model is employed to describe the material. On the other hand, long-range repulsive charge interactions were proposed to be crucial for understanding the optical excitations of undoped 1D Mott insulators. Motivated by these contrasting proposals, we perform density-matrix renormalization group calculations of the single-particle spectral function as well as dynamical spin and charge structure factors for two kinds of extended 1D Hubbard models. The spectral function for the long-range repulsive model less agrees with the ARPES data as compared with that for the attractive one. The dynamical spin and charge structure factors also exhibit contrasting behaviors between the two models: The attractive model shows less momentum dependence of the integrated weight in the dynamical spin structure factor and more accumulation of the weight on the upper edge of particle-hole-type excitation in the dynamical charge structure factor. These features give a good criterion of an appropriate model for doped 1D Mott insulators, which can be judged by resonant-inelastic x-ray scattering experiments.
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页数:6
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