Study on the facet effect in LEC-GaSb single crystals

被引：1

作者：

Dong, Weimin ^{[1
]}

Jianga, Jun ^{[1
]}

Peng, Qianwen ^{[1
]}

Liu, Chengao ^{[1
]}

Chu, Deliang ^{[1
]}

Duan, Biwen ^{[1
]}

Feng, Henghao ^{[1
]}

Yanga, Jin ^{[1
]}

Guo, Wei ^{[2
]}

Kong, Jincheng ^{[1
]}

Zhao, Jun ^{[1
]}

机构：

[1] Kunming Inst Phys, Kunming 650223, Peoples R China

[2] Beijing Inst Technol, Sch Phys, Beijing 100081, Peoples R China

来源：

JOURNAL OF CRYSTAL GROWTH | 2024年 / 636卷

关键词：

GROWTH;

D O I：

10.1016/j.jcrysgro.2024.127706

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

The " facet effect" " had an important impact on the growth and quality of III-V semiconductor crystals. Herein, Tedoped (11 1) ) and (100 ) GaSb single crystals were grown by the liquid-encapsulated Czochralski (LEC) method. The theoretical causes of the central facets of (111 ) GaSb and the edge facets of (1 00) ) GaSb were studied in detail. The Te component segregation, electrical parameter changes, infrared transmittance differences, and epitaxial film defects caused by the " facet effect" " were comprehensively analyzed. The influence of the shoulder angle on the edge facets of (100 ) GaSb and the size differences of edge facets between the Ga-face and Sb-face were studied.

引用

页数：6