PYN-based antiferroelectric ceramics with superior energy storage performance within an ultra-wide temperature range

被引:1
|
作者
Chen, Chukai [1 ]
Qian, Jin [1 ]
Lin, Jinfeng [1 ]
Li, Guohui [1 ]
Shi, Cheng [1 ]
Wang, Simin [1 ]
Sun, Chao [1 ]
Ge, Guanglong [1 ]
Shen, Bo [1 ]
Zhai, Jiwei [1 ]
机构
[1] Tongji Univ, Sch Mat Sci & Engn, Key Lab Adv Civil Engn Mat Minist Educ, Shanghai 201804, Peoples R China
关键词
Pb(Yb0.5Nb0.5)O3; Wide temperature range; B-site ordering; A-site distortion; Energy storage devices; LEAD-FREE CERAMICS; DENSITY; DISCHARGE; MICROSTRUCTURE; EFFICIENCY; POLYMER; STABILITY;
D O I
10.1016/j.actamat.2024.120225
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Antiferroelectric (AFE) ceramics are known for their rich field-induced phase transitions, which mainly contribute to their superior energy storage performance. However, the phase transitions instability caused by high temperature often limits its application scenarios. Developing AFE ceramics with high energy storage properties and wide application temperature ranges is challenging. Here, considering the B-site ordering characteristics of Pb(Yb0.5Nb0.5)O3, we propose a simple approach for introducing A-site distortion and adjusting Bsite ordering to confront these challenges. In our Fe3+/Sr2+co-doping system, we realized an ultra-wide temperature range of 25-200 degrees C, within which the recoverable storage density was considerable: 8.48-13.39 J cm- 3. In this interval, the discharge energy density could reach 6.15-9.67J cm-3, and the discharge current density and discharge power density were 755.09-1667.36 A cm- 2 and 207.65-500.21 MW cm-3, respectively. The obtained high-temperature energy storage performance was superior to that of existing energy storage ceramics or polymer films. The introduction of A-site distortion improves the stability of AFE phase, the decrease in B-site ordering suppresses the remanent polarization and delays change in structural symmetry with temperature. This study forms a basis for further applications of dielectric capacitors and signifies the development of widetemperature-range energy storage devices.
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页数:11
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