Impact of electrical testing strategies on the performance metrics of bio-organic-based resistive switching memory

被引：3

作者：

Awais, Muhammad ^{[1
]}

Leong, Hao Zhe ^{[1
]}

Othman, Nadras ^{[2
]}

Shafiq, Mohamad Danial ^{[2
]}

Zhao, Feng ^{[3
]}

Cheong, Kuan Yew ^{[1
]}

机构：

[1] Univ Sains Malaysia, Sch Mat & Mineral Resources Engn, Elect Mat Res Grp, Engn Campus, Nibong Tebal 14300, Pulau Pinang, Malaysia

[2] Univ Sains Malaysia, Sch Mat & Mineral Resources Engn, Engn Campus, Nibong Tebal 14300, Pulau Pinang, Malaysia

[3] Washington State Univ, Sch Engn & Comp Sci, Micro Nanoelect & Energy Lab, Vancouver, WA 98686 USA

来源：

MRS COMMUNICATIONS | 2024年 / 14卷 / 06期

基金：

美国国家科学基金会;

关键词：

THIN-FILM; HONEY; LAYER;

D O I：

10.1557/s43579-024-00653-1

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Resistive Random-Access Memory (ReRAM) is considered as one of the most promising non-volatile memory technologies because of its high scalability, fast switching speed, and low power consumption. While many review papers are focused on investigating material types, material properties, device fabrication methods, and device structures, the influence of electrical testing strategies on ReRAM performance has yet been reviewed, particularly for bio-organic-based ReRAM. This review compiled, analyzed, and discussed how compliance current, voltage sweep rate, voltage sweep range, and voltage sweeping direction affect the ON/OFF ratio, read memory window, and both SET and RESET voltages of ReRAM.Graphical abstractA typical bio-organic based resistive switching random-access memory (ReRAM) structure consists of top electrode, memristive thin film, bottom electrode, and substrate. The design consideration of the ReRAM is numberred for each components.

引用

页码：1281 / 1287

页数：7

共 30 条

[1] Resistive switching in emerging materials and their characteristics for neuromorphic computing [J].