Low-loss Se-based phase-change materials for infrared photonics

被引：0

作者：

Burtsev, A. A. ^{[1
]}

Kiselev, A. V. ^{[1
]}

Fedyanina, M. E. ^{[2
]}

Eliseev, N. N. ^{[1
]}

Mikhalevsky, V. A. ^{[1
]}

Nevzorov, A. A. ^{[1
]}

Ionin, V. V. ^{[1
]}

Grebenev, V. V. ^{[1
]}

Maliutin, A. M. ^{[1
]}

Glebov, V. N. ^{[1
]}

Novodvorsky, O. A. ^{[1
]}

Lotin, A. A. ^{[1
]}

机构：

[1] Kurchatov Inst, Natl Res Ctr, Moscow 123098, Russia

[2] Natl Res Univ Elect Technol, Zelenograd 124498, Moscow, Russia

来源：

OPTICAL MATERIALS | 2024年 / 157卷

关键词：

Phase-change materials; Selenides; Crystallization; Thin-film properties; OPTICAL-PROPERTIES; UNIVERSAL MEMORY; BI2SE3; SB2SE3; CRYSTALLIZATION; FILM;

D O I：

10.1016/j.optmat.2024.116117

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The work presents the results of comprehensive studies of the optical and transport properties, phase transition heats, the X-Ray diffraction and Raman spectra of Ge2Sb2Se4Te1, Sb2Se3 and Bi2Se3 samples obtained by vacuum thermal deposition. We demonstrate a high contrast in the refractive index and extinction coefficient in the spectral range in wavelengths of 500-1800 nm and transmissivity and reflectivity spectra in the range in wavelengths of 500-3000 nm. The investigated materials show low optical losses and high figure of merit in much of the IR-spectrum. Changes in structural properties are analyzed by XRD and Raman methods. Features of phase transformations are described by thermogravimetry and differential scanning calorimetry.

引用

页数：6

共 61 条

[1] Tunable nanophotonics enabled by chalcogenide phase-change materials
Abdollahramezani, Sajjad
Hemmatyar, Omid
Taghinejad, Hossein
Krasnok, Alex
Kiarashinejad, Yashar
Zandehshahvar, Mohammadreza
Alu, Andrea
Adibi, Ali
[J]. NANOPHOTONICS, 2020, 9 (05) : 1189 - 1241
[2] THRESHOLD SWITCHING IN CHALCOGENIDE-GLASS THIN-FILMS
ADLER, D
SHUR, MS
SILVER, M
OVSHINSKY, SR
[J]. JOURNAL OF APPLIED PHYSICS, 1980, 51 (06) : 3289 - 3309
[3] Raman scattering study of GeTe and Ge2Sb2Te5 phase-change materials
Andrikopoulos, K. S.
Yannopoulos, S. N.
Kolobov, A. V.
Fons, P.
Tominaga, J.
[J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 2007, 68 (5-6) : 1074 - 1078
[4] Multilevel-Cell Phase-Change Memory: A Viable Technology
Athmanathan, Aravinthan
Stanisavljevic, Milos
Papandreou, Nikolaos
Pozidis, Haralampos
Eleftheriou, Evangelos
[J]. IEEE JOURNAL ON EMERGING AND SELECTED TOPICS IN CIRCUITS AND SYSTEMS, 2016, 6 (01) : 87 - 100
[5] Analysis of crystal growth and viscosity in Ge-Sb-Se-Te undercooled melts
Bartak, Jaroslav
Kostal, Petr
Malek, Jiri
[J]. JOURNAL OF NON-CRYSTALLINE SOLIDS, 2019, 505 : 1 - 8
[6] Structural analysis and chemical stability of Ge and As telluride glasses by Raman spectroscopy
Bayko, Dmitriy P.
Lucas, Pierre
[J]. JOURNAL OF NON-CRYSTALLINE SOLIDS-X, 2023, 18
[7] Resistance modulation in Ge2Sb2Te5
Behera, Jitendra K.
Wang, WeiJie
Zhou, Xilin
Guan, Shan
Weikang, Wu
Shengyuan, Yang A.
Simpson, Robert E.
[J]. JOURNAL OF MATERIALS SCIENCE & TECHNOLOGY, 2020, 50 (50): : 171 - 177
[8] Sb 2 S 3 as a low-loss phase-change material for mid-IR photonics
Bieganski, Adam
Perestjuk, Marko
Armand, Remi
Della Torre, Alberto
Laprais, Capucine
Saint-Girons, Guillaume
Reboud, Vincent
Hartmann, Jean-Michel
Tortai, Jean-Herve
Moreau, Antonin
Lumeau, Julien
Nguyen, Thach
Mitchell, Arnan
Monat, Christelle
Cueff, Sbastien
Grillet, Christian
[J]. OPTICAL MATERIALS EXPRESS, 2024, 14 (04): : 862 - 870
[9] Physical properties' temperature dynamics of GeTe, Ge2Sb2Te5 and Ge2Sb2Se4Te1 phase change materials
Burtsev, A. A.
Eliseev, N. N.
Mikhalevsky, V. A.
Kiselev, A. V.
Ionin, V. V.
Grebenev, V. V.
Karimov, D. N.
Lotin, A. A.
[J]. MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 2022, 150
[10] Thermal properties and the structure of amorphous Sb2Se3 thin film
Cernoskova, E.
Todorov, R.
Cernosek, Z.
Holubova, J.
Benes, L.
[J]. JOURNAL OF THERMAL ANALYSIS AND CALORIMETRY, 2014, 118 (01) : 105 - 110

← 1 2 3 4 5 6 7 →