A New Semi-Analytical Model for Erase Transients of 3-D Gate-All-Around (GAA) NAND Flash Memories

被引：0

作者：

Yoo, Jinil ^{[1
]}

Choi, Haechan ^{[1
]}

Shin, Hyungcheol ^{[1
]}

机构：

[1] Seoul Natl Univ, Interuniv Semicond Res Ctr, Dept Elect & Comp Engn, Seoul 08826, South Korea

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2024年 / 71卷 / 11期

关键词：

Mathematical models; Logic gates; Numerical models; Electron traps; Tunneling; Transient analysis; Electrons; 3-D nand flash memory; amphoteric trap model (ATM); back tunneling; continuity equation; threshold voltage; RETENTION; OPERATION; DYNAMICS; OXIDE;

D O I：

10.1109/TED.2024.3454284

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this article, we introduce a new semi-analytical model to calculate the erase (ERS) transients of 3-D gate-all-around (GAA) nand flash memories. A previously proposed program (PGM) model is revised by adopting the amphoteric trap model (ATM). Injection/escape/back tunneling components are added and the influences of each are investigated. The proposed model makes a better fit with experimental data than the previous model and also successfully implements the back tunneling component.

引用

页码：6665 / 6671

页数：7

共 6 条

[1] Precise analytical model for short channel Cylindrical Gate (CylG) Gate-All-Around (GAA) MOSFET
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[2] 5-nm Gate-All-Around Transistor Technology With 3-D Stacked Nanosheets
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[3] Investigation and SPICE Compact Model of Spacer Region for Static Characteristics of 3-D NAND Flash Memories
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[4] A Process-Aware Compact Model for GIDL-Assisted Erase Optimization of 3-D V-NAND Flash Memory
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[5] New Statistical Data and Modeling of Stress-Induced Leakage Current in 3D-NAND Floating Gate Non-Volatile Flash Memories
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IEEE ELECTRON DEVICE LETTERS, 2022, 43 (01) : 29 - 31
[6] A novel 2-D analytical model for the electrical characteristics of a gate-all-around heterojunction tunnel field-effect transistor including depletion regions
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Vimala, P.
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Pandian, M. Karthigai
JOURNAL OF COMPUTATIONAL ELECTRONICS, 2020, 19 (03) : 1144 - 1153

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