STUDY OF THE INHOMOGENEITIES OF OVERCOMPENSED SILICON SAMPLES DOPED WITH MANGANESE

Inhomogeneities in the near-surface region of diffusion-doped silicon with manganese atoms were studied using the local photo-EMF method and photovoltage and photoconductivity signals were detected. It has been established that the inhomogeneous region is located at a depth of 3 divided by 35 mu m from the surface of the crystal. The magnitude of photo-EMF in these layers does not change monotonically from point to point. It was revealed that the photo-EMF spectra depend on the wavelength of the irradiated light, while the shape of the areas and their shift are related to the penetration depth of laser radiation. The photo-EMF signal increases to a depth of similar to 25 mu m from the surface, then saturates and from similar to 30 mu m smoothly decreases and completely disappears at a depth of similar to 40 mu m. The magnitude of the internal electric field was determined using the Tauc method. A model of the structure of the near-surface region of diffusion-doped silicon with manganese is proposed.