Space charge-induced capacitance recovery in blue quantum dot light-emitting diodes

被引:0
|
作者
Qu, Xiangwei [1 ,2 ,3 ,4 ]
Ma, Jingrui [1 ,2 ,3 ,4 ]
Li, Depeng [1 ,2 ,3 ,4 ]
Wang, Kai [1 ,2 ,3 ,4 ]
Sun, Xiao Wei [1 ,2 ,3 ,4 ]
机构
[1] Southern Univ Sci Technol, Inst Nanosci & Applicat, Shenzhen 518055, Peoples R China
[2] Southern Univ Sci & Technol, Dept Elect & Elect Engn, Shenzhen 518055, Peoples R China
[3] Southern Univ Sci & Technol, Key Lab Energy Convers & Storage Technol, Minist Educ, Shenzhen 518055, Peoples R China
[4] Southern Univ Sci & Technol, Shenzhen Key Lab Adv Quantum Dot Displays & Lighti, Shenzhen 518055, Peoples R China
基金
中国国家自然科学基金;
关键词
NEGATIVE CAPACITANCE; PERFORMANCE; INJECTION;
D O I
10.1063/5.0226752
中图分类号
O59 [应用物理学];
学科分类号
摘要
In this work, we report the capacitance recovery behavior in the blue quantum dot light-emitting diode (QLED) by capacitance-voltage (C-V) characterizations. A comprehensive study of the C-V, dC/dV-V, and current density-voltage characteristics of pristine and shelf-aged devices suggests that capacitance recovery is associated with space charge-induced charge accumulation. At lower temperatures, the capacitance recovery in the shelf-aged device is efficiently suppressed due to the difficulty in building up the space charge, which supports our argument. Moreover, the capacitance recovery behavior of QLED only happens at low frequencies (a few hundred hertz), which is related to the time constant for charge accumulation at the selected voltage. Our work shows the effect of space charge on device capacitance and enriches the comprehension of carrier processes in QLED under AC measurement.
引用
收藏
页数:6
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