P-GaN Gate HEMTs: A Solution to Improve the High-Temperature Gate Lifetime

被引：1

作者：

Tallarico, A. N. ^{[1
]}

Millesimo, M. ^{[1
]}

Borga, M. ^{[2
]}

Bakeroot, B. ^{[3
,4
]}

Posthuma, N. ^{[2
]}

Cosnier, T.

Decoutere, S. ^{[2
]}

Sangiorgi, E. ^{[1
]}

Fiegna, C. ^{[1
]}

机构：

[1] Univ Bologna, Adv Res Ctr Elect Syst, Dept Elect Elect & Informat Engn, I-47522 Cesena, Italy

[2] Imec, B-3001 Leuven, Belgium

[3] IMEC, Ctr Microsyst Technol, B-9052 Ghent, Belgium

[4] Univ Ghent, B-9052 Ghent, Belgium

来源：

IEEE ELECTRON DEVICE LETTERS | 2024年 / 45卷 / 09期

基金：

欧盟地平线“2020”;

关键词：

Logic gates; Stress; MODFETs; HEMTs; Layout; Electric fields; Electric breakdown; Gallium nitride; reliability; Schottky gate; breakdown; time to failure; gate layout; RELIABILITY; FREQUENCY; BREAKDOWN;

D O I：

10.1109/LED.2024.3424563

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this letter, we report an approach to improve the forward bias gate reliability of Schottky gate p-GaN HEMTs. In particular, a gate layout solution, namely Gate Within Active Area (GWA), aimed at improving the high-temperature time to failure (TTF), is proposed and validated. This solution allows to avoid the exposure of the gate finger (p-GaN/metal) to the nitrogen-implantation needed for termination and isolation purposes. GWA devices feature a significantly improved gate reliability at high temperature with respect to the reference ones, under both DC and pulsed stress tests. Finally, it is demonstrated that the Schottky gate p-GaN HEMTs show a positive temperature-dependent gate TTF in a range up to 150 degrees C, confirming the crucial role of impact ionization on the gate failure.

引用

页码：1630 / 1633

页数：4

共 32 条

[1] The 2018 GaN power electronics roadmap [J].

Amano, H. ;

Baines, Y. ;

Beam, E. ;

Borga, Matteo ;

Bouchet, T. ;

Chalker, Paul R. ;

Charles, M. ;

Chen, Kevin J. ;

Chowdhury, Nadim ;

Chu, Rongming ;

De Santi, Carlo ;

De Souza, Maria Merlyne ;

Decoutere, Stefaan ;

Di Cioccio, L. ;

Eckardt, Bernd ;

Egawa, Takashi ;

Fay, P. ;

Freedsman, Joseph J. ;

Guido, L. ;

Haeberlen, Oliver ;

Haynes, Geoff ;

Heckel, Thomas ;

Hemakumara, Dilini ;

Houston, Peter ;

Hu, Jie ;

Hua, Mengyuan ;

Huang, Qingyun ;

Huang, Alex ;

Jiang, Sheng ;

Kawai, H. ;

Kinzer, Dan ;

Kuball, Martin ;

Kumar, Ashwani ;

Lee, Kean Boon ;

Li, Xu ;

Marcon, Denis ;

Maerz, Martin ;

McCarthy, R. ;

Meneghesso, Gaudenzio ;

Meneghini, Matteo ;

Morvan, E. ;

Nakajima, A. ;

Narayanan, E. M. S. ;

Oliver, Stephen ;

Palacios, Tomas ;

Piedra, Daniel ;

Plissonnier, M. ;

Reddy, R. ;

Sun, Min ;

Thayne, Iain .

JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2018, 51 (16)

[2] GaN-on-Si Power Technology: Devices and Applications [J].

Chen, Kevin J. ;

Haeberlen, Oliver ;

Lidow, Alex ;

Tsai, Chun Lin ;

Ueda, Tetsuzo ;

Uemoto, Yasuhiro ;

Wu, Yifeng .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 2017, 64 (03) :779-795

[3] Gate Reliability of Schottky-Type p-GaN Gate HEMTs Under AC Positive Gate Bias Stress With a Switching Drain Bias [J].

Cheng, Yan ;

He, Jiabei ;

Xu, Han ;

Zhong, Kailun ;

Zheng, Zheyang ;

Sun, Jiahui ;

Chen, Kevin J. .

IEEE ELECTRON DEVICE LETTERS, 2022, 43 (09) :1404-1407

[4]

Chihani Omar, 2018, 2018 IEEE International Reliability Physics Symposium (IRPS), pP, DOI 10.1109/IRPS.2018.8353685

[5] Characterization and analysis of low-temperature time-to-failure behavior in forward-biased Schottky-type p-GaN gate HEMTs [J].

He, Jiabei ;

Wei, Jin ;

Li, Yang ;

Zheng, Zheyang ;

Yang, Song ;

Huang, Baoling ;

Chen, Kevin J. .

APPLIED PHYSICS LETTERS, 2020, 116 (22)

[6] Frequency- and Temperature-Dependent Gate Reliability of Schottky-Type p-GaN Gate HEMTs [J].

He, Jiabei ;

Wei, Jin ;

Yang, Song ;

Wang, Yuru ;

Zhong, Kailun ;

Chen, Kevin J. .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 2019, 66 (08) :3453-3458

[7] Gate Current Transport in Enhancement-Mode p-n Junction/AlGaN/GaN (PNJ) HEMT [J].

Hua, Mengyuan ;

Wang, Chengcai ;

Chen, Junting ;

Zhao, Junlei ;

Yang, Song ;

Zhang, Li ;

Zheng, Zheyang ;

Wei, Jin ;

Chen, Kevin J. .

IEEE ELECTRON DEVICE LETTERS, 2021, 42 (05) :669-672

[8]

Jaeger De, 2017, U.S. Patent, Patent No. [9634107B2, 9634107]

[9] Review of Commercial GaN Power Devices and GaN-Based Converter Design Challenges [J].

Jones, Edward A. ;

Wang, Fei ;

Costinett, Daniel .

IEEE JOURNAL OF EMERGING AND SELECTED TOPICS IN POWER ELECTRONICS, 2016, 4 (03) :707-719

[10] An Investigation of Frequency Dependent Reliability and Failure Mechanism of pGaN Gated GaN HEMTs [J].

Kini, Roshan L. ;

Dhakal, Shankar ;

Mahmud, Sadab ;

Sellers, Andrew J. ;

Hontz, Michael R. ;

Tine, Cheikh A. ;

Khanna, Raghav .

IEEE ACCESS, 2020, 8 :137312-137321

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