A novel method for the synthesis of MoSSe using an (Et4N)2[Mo3S4Se3Br6] complex as the sole precursor

被引：2

作者：

Tran, Dang B. ^{[1
]}

Le, Ly T. ^{[1
]}

Nguyen, Duc N. ^{[1
]}

Nguyen, Quyen T. ^{[1
]}

Nga, Ta Thi Thuy ^{[2
,4
,5
]}

Chou, Wu-Ching ^{[2
]}

Luc, Hoang H. ^{[3
]}

Dong, Chung-Li ^{[4
,5
]}

Tran, Phong D. ^{[1
]}

机构：

[1] Vietnam Acad Sci & Technol, Univ Sci & Technol Hanoi, 18 Hoang Quoc Viet, Hanoi, Vietnam

[2] Natl Yang Ming Chiao Tung Univ, Dept Electrophys, Hsinchu 300093, Taiwan

[3] Hanoi Natl Univ Educ, Inst Nat Sci, 136 Xuan Thuy, Cau Giay, Hanoi, Vietnam

[4] Tamkang Univ, Res Ctr Xray Sci, New Taipei 25137, Taiwan

[5] Tamkang Univ, Dept Phys, New Taipei 25137, Taiwan

来源：

DALTON TRANSACTIONS | 2024年 / 53卷 / 37期

关键词：

HYDROGEN EVOLUTION REACTION; CARBON NANOTUBES; MOLYBDENUM; ALLOY; MONOLAYER; PHOTOCATALYST; CATALYSTS; CHARGE; SITES;

D O I：

10.1039/d4dt02016b

中图分类号：

O61 [无机化学];

学科分类号：

070301 ; 081704 ;

摘要：

MoSSe is a semiconducting material with a layered structure similar to MoS(2 )and MoSe2, which shows potential applications in optoelectronics, solar cells, sensing, and catalysis. Synthesis of this material with a controllable structure and chemical composition represents a great challenge. Herein, we report a new method for the synthesis of MoSSe by employing an [Et4N](2)[Mo3S4Se3Br6] complex as the sole precursor. Thermal annealing of this complex under an Ar atmosphere at moderate temperatures ranging from 350 degrees C to 650 degrees C resulted in the formation of pure MoSSe. The morphology and structure of MoSSe were characterized using SEM, HRTEM, XRD, Raman spectroscopy, X-ray absorption near-edge structure (XANES) and extended X-ray absorption fine structure (EXAFS). The effects of annealing temperature on the structure of MoSSe were also examined.

引用

页码：15638 / 15647

页数：10

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