Conditions for Cuprous Chloride Ultrathin Film Formation on Silicon Substrate by Molecular Beam Epitaxy

被引：0

作者：

Ichimiya, Masayoshi ^{[1
]}

Funai, Keita ^{[1
]}

Yanagisawa, Junichi ^{[1
]}

机构：

[1] Univ Shiga Prefecture, Sch Engn, Hikone 5228533, Japan

来源：

MATERIALS TRANSACTIONS | 2024年 / 65卷 / 09期

关键词：

cuprous chloride; ultrathin film; molecular beam epitaxy; sublimation effect; atomic force microscope; DEPENDENT RADIATIVE DECAY; THIN-FILMS; CUCL; EXCITONS; LIFETIME; LUMINESCENCE; TIME; PHOTOLUMINESCENCE; GROWTH; FIELD;

D O I：

10.2320/matertrans.MT-N2024005

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We investigated the conditions under which extremely thin films of CuCl are formed by molecular-beam epitaxy ( MBE) on Si substrates, which are expected to grow epitaxially due to the small lattice mismatch of 0.44% with CuCl. Atomic force microscopy (AFM) observations of samples fabricated under various growth conditions revealed that the lower the substrate temperature, the thinner films could be formed. Experimental results also showed that suppression of the sublimation effect is effective for thinner film formation in CuCl, which has a low melting point, and a thin film of around 10 atomic layers is successfully fabricated by growth with the lowest substrate temperature.

引用

页码：1067 / 1071

页数：5

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