Influence of Hf4+ ions concentration on the defect structure and exposure energy in Hf:Ho:LiNbO3

被引：8
|
作者：
Dai, Li [1 ]
Li, Dayong [1 ]
Xu, Chao [2 ]
Guo, Jingjie [3 ]
Xu, Yuheng [2 ]
机构：
[1] Harbin Univ Sci & Technol, Sch Mat Sci & Engn, Harbin 150080, Peoples R China
[2] Harbin Inst Technol, Dept Appl Chem, Harbin 150001, Peoples R China
[3] Harbin Inst Technol, Sch Mat Sci & Engn, Harbin 150001, Peoples R China
来源：
OPTICS AND LASER TECHNOLOGY | 2013年 / 45卷
基金：
中国国家自然科学基金;
关键词：
Hf:Ho:LiNbO3; Defect structures; Light-induced scattering; OPTICAL-DAMAGE RESISTANCE; POLED LITHIUM-NIOBATE; CRYSTALS; LINBO3;
D O I：
10.1016/j.optlastec.2012.06.003
中图分类号：
O43 [光学];
学科分类号：
070207 ; 0803 ;
摘要：
A series of Hf:Ho:LiNbO3 crystals with various levels of HfO2 doping were grown by the conventional Czochraski technique. The measurement of the Hf and Ho concentrations in the crystals was carried out with an inductively coupled plasma atomic emission spectrometer (ICP-OE/MS). The infrared (IR) spectrum was measured in order to analyze the defect structure of the crystals. The light-induced scattering was characterized quantitatively via the incident exposure energy. The results showed that the ability to resist the light-induced scattering was improved considerably with the increase in concentration of Hf4+, however, light-induced scattering resistance ability weakened as the concentration of Hf4+ surpasses the concentration to 8 mol%. The relationship between the defect structures and the light-induced scattering was discussed. Published by Elsevier Ltd.
引用
收藏
页码：503 / 507
页数：5
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