Solution-processed ZnO quantum dot thin films with low solvent residues and ultra-flat surfaces

被引:0
作者
Zheng, Liubin [1 ]
Ogino, Kenji [1 ,2 ]
机构
[1] Tokyo Univ Agr & Technol, Grad Sch Bioapplicat & Syst Engn, 2-24-16 Nakacho, Koganei, Tokyo 1848588, Japan
[2] Tokyo Univ Agr & Technol, Inst Global Innovat Res, 2-24-16 Nakacho, Koganei, Tokyo 1848588, Japan
关键词
ZnO; Thin film; Solvent residues; Ultra-flat; Monodispersity; NANOPARTICLES; PERFORMANCE; FABRICATION; STABILITY; LAYERS;
D O I
10.1016/j.colsurfa.2024.135051
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
ZnO quantum dots are considered a desirable material for the electron transport layer (ETL) in thin-film optoelectronic devices, determining their efficiency and stability. Solution-processed ZnO quantum dot films are fascinating due to the potential for low-cost manufacture of large-area devices and the compatibility with flexible substrates. However, eliminating solvent residues from solution-derived ZnO films remains a challenge, as their presence can significantly impact the efficiency and performance of the devices. Herein, we reported a straightforward and controllable strategy to overcome the above problem, aiming to achieve low solvent residues and ultra-flat ZnO films. Methanol, with its low boiling point and high relative evaporation rate, is utilized as a dispersing solvent for ZnO quantum dots, the resulting thin films exhibit low solvent residue, as confirmed by TGA and NMR analyses. Moreover, we achieved a stable monodisperse state of ZnO quantum dots in methanol solvent for three months by a simple temperature control method. The ZnO film prepared using a lowtemperature spin-coating technique demonstrates extremely low surface roughness (RMS less than 1 nm).
引用
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页数:12
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