Compact Internally Matched High-Power Power Amplifier with a Wide Frequency Band of 0.8-2 GHz

被引：0

作者：

Li, Caoyu ^{[1
]}

Zhang, Ziliang ^{[2
]}

Su, Xiang ^{[2
]}

Li, Yue ^{[2
]}

Liang, Xinru ^{[2
]}

Pei, Yi ^{[3
]}

Chen, Changchang ^{[3
]}

Xu, Yuehang ^{[2
]}

机构：

[1] Univ Elect Sci & Technol China, Yangtze Delta Reg Inst Huzhou, Huzhou 313001, Peoples R China

[2] Univ Elect Sci & Technol China, Sch Elect Sci & Engn, 2006 Xiyuan Ave,West Hitech Zone, Chengdu 611731, Peoples R China

[3] Dynax Semicond Inc, Suzhou 215300, Peoples R China

来源：

ELECTRONICS | 2024年 / 13卷 / 14期

关键词：

power amplifier; wide-band; high power; internally matched; GAN;

D O I：

10.3390/electronics13142687

中图分类号：

TP [自动化技术、计算机技术];

学科分类号：

0812 ;

摘要：

In this paper, a GaN high-electron-mobility transistor (HEMT) compact high-power wide-band power amplifier with an operation frequency from 0.8 GHz to 2 GHz is proposed. In order to realize a compact design, an internally matched method is employed. A wide-band matching strategy with an LC network and a multi-stage wide-band power combiner/divider is introduced in this design to achieve a wide bandwidth. A power combination structure is applied to have high output power. Wire-spiral inductance and film capacitors are employed to construct the compact matching network. The equivalent inductance of the bonding wire is also involved in the matching network. Experimental results show that the PAE (power-added efficiency) during the whole operation's bandwidth (0.8 GHz to 2.0 GHz) is from 40% to 57%. The output power can reach from 48.3 dBm to 49.8 dBm with a circuit size of 30.8x27.4mm2.

引用

页数：14

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