Robust Growth of 2D Transition Metal Dichalcogenide Vertical Heterostructures via Ammonium-Assisted CVD Strategy

被引:3
作者
Li, Wei [1 ]
Qin, Qiuyin [2 ]
Li, Xin [2 ]
Ying, Huangfu [2 ]
Shen, Dingyi [3 ]
Liu, Jialing [2 ]
Li, Jia [2 ]
Li, Bo [4 ]
Wu, Ruixia [1 ]
Duan, Xidong [2 ]
机构
[1] Hunan Univ, Coll Phys & Elect, Changsha 410082, Peoples R China
[2] Hunan Univ, Coll Chem & Chem Engn, Hunan Key Lab Two Dimens Mat, State Key Lab Chemo Biosensing & Chemometr, Changsha 410082, Peoples R China
[3] Hubei Univ Automot Technol, Sch Math Phys & Optoelect Engn, Hubei Key Lab Energy Storage & Power Battery, Shiyan 442002, Peoples R China
[4] Hunan Univ, Coll Semicond, Coll Integrated Circuits, Changsha 410082, Peoples R China
基金
中国国家自然科学基金;
关键词
chemical vapor deposition; optoelectronics; transition metal dichalcogenides; van der Waals heterostructures; EPITAXIAL-GROWTH; INTERLAYER EXCITONS; RAMAN-SPECTRA; LAYER MOSE2; MONOLAYER; GRAPHENE; GAP; WS2;
D O I
10.1002/adma.202408367
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Two dimension (2D) transition metal dichalcogenides (TMD) heterostructures have opened unparalleled prospects for next-generation electronic and optoelectronic applications due to their atomic-scale thickness and distinct physical properties. The chemical vapor deposition (CVD) method is the most feasible approach to prepare 2D TMD heterostructures. However, the synthesis of 2D vertical heterostructures faces competition between in-plane and out-of-plane growth, which makes it difficult to precisely control the growth of vertical heterostructures. Here, a universal and controllable strategy is reported to grow various 2D TMD vertical heterostructures through an ammonium-assisted CVD process. The ammonium-assisted strategy shows excellent controllability and operational simplicity to prevent interlayer diffusion/alloying and thermal decomposition of the existed TMD templates. Ab initio simulations demonstrate that the reaction between NH4Cl and MoS2 leads to the formation of MoS3 clusters, promoting the nucleation and growth of 2D MoS2 on existed 2D WS2 layer, thereby leading to the growth of vertical heterostructure. The resulting 2D WSe2/WS2 vertical heterostructure photodetectors demonstrate an outstanding optoelectronic performance, which are comparable to the performances of photodetectors fabricated from mechanically exfoliated and stacked vertical heterostructures. The ammonium-assisted strategy for robust growth of high-quality vertical van der Waals heterostructures will facilitate fundamental physics investigations and device applications in electronics and optoelectronics. This work demonstrates a universal strategy for robust growth of high-quality transition metal dichalcogenide (TMD) vertical heterostructures and a novel design concept for the fabrication of high mobility and high responsivity photodetectors based on 2D TMD vertical heterostructures, which holds promise for the next-generation photodetectors. image
引用
收藏
页数:11
相关论文
共 85 条
  • [11] The Negative-Charge-Triggered "Dead Zone" between Electrode and Current Collector Realizes Ultralong Cycle Life of Aluminum-Ion Batteries
    Guan, Wei
    Huang, Zheng
    Wang, Wei
    Song, Wei-Li
    Tu, Jiguo
    Luo, Yiwa
    Lei, Haiping
    Wang, Mingyong
    Jiao, Shuqiang
    [J]. ADVANCED MATERIALS, 2023, 35 (50)
  • [12] Extraordinary Room-Temperature Photoluminescence in Triangular WS2 Monolayers
    Gutierrez, Humberto R.
    Perea-Lopez, Nestor
    Elias, Ana Laura
    Berkdemir, Ayse
    Wang, Bei
    Lv, Ruitao
    Lopez-Urias, Florentino
    Crespi, Vincent H.
    Terrones, Humberto
    Terrones, Mauricio
    [J]. NANO LETTERS, 2013, 13 (08) : 3447 - 3454
  • [13] van der Waals Metallic Transition Metal Dichalcogenides
    Han, Gang Hee
    Dinh Loc Duong
    Keum, Dong Hoon
    Yun, Seok Joon
    Lee, Young Hee
    [J]. CHEMICAL REVIEWS, 2018, 118 (13) : 6297 - 6336
  • [14] Evidence of indirect gap in monolayer WSe2
    Hsu, Wei-Ting
    Lu, Li-Syuan
    Wang, Dean
    Huang, Jing-Kai
    Li, Ming-Yang
    Chang, Tay-Rong
    Chou, Yi-Chia
    Juang, Zhen-Yu
    Jeng, Horng-Tay
    Li, Lain-Jong
    Chang, Wen-Hao
    [J]. NATURE COMMUNICATIONS, 2017, 8
  • [15] Chemical Dopant-Free Controlled MoTe2/MoSe2 Heterostructure toward a Self-Driven Photodetector and Complementary Logic Circuits
    Hu, Wennan
    Wang, Hu
    Dong, Jianguo
    Sun, Haoran
    Wang, Yue
    Sheng, Zhe
    Zhang, Zengxing
    [J]. ACS APPLIED MATERIALS & INTERFACES, 2023, 15 (14) : 18182 - 18190
  • [16] Precise and reversible band gap tuning in single-layer MoSe2 by uniaxial strain
    Island, Joshua O.
    Kuc, Agnieszka
    Diependaal, Erik H.
    Bratschitsch, Rudolf
    van der Zant, Herre S. J.
    Heine, Thomas
    Castellanos-Gomez, Andres
    [J]. NANOSCALE, 2016, 8 (05) : 2589 - 2593
  • [17] Na2SO4-Regulated High-Quality Growth of Transition Metal Dichalcogenides by Controlling Diffusion
    Jin, Yuanyuan
    Cheng, Miao
    Liu, Hang
    Ouzounian, Miray
    Hu, Travis Shihao
    You, Bingying
    Shao, Gonglei
    Liu, Xiao
    Liu, Yeru
    Li, Huimin
    Li, Shisheng
    Guan, Jie
    Liu, Song
    [J]. CHEMISTRY OF MATERIALS, 2020, 32 (13) : 5616 - 5625
  • [18] Low-Temperature and Large-Scale Production of a Transition Metal Sulfide Vertical Heterostructure and Its Application for Photodetectors
    Kanade, Chaitanya Kaluram
    Seok, Hyunho
    Kanade, Vinit Kaluram
    Aydin, Kubra
    Kim, Hyeong U.
    Mitta, Sekhar Babu
    Yoo, Won Jong
    Kim, Taesung
    [J]. ACS APPLIED MATERIALS & INTERFACES, 2021, 13 (07) : 8710 - 8717
  • [19] Excitation intensity dependence of photoluminescence from monolayers of MoS2 and WS2/MoS2 heterostructures
    Kaplan, D.
    Gong, Y.
    Mills, K.
    Swaminathan, V.
    Ajayan, P. M.
    Shirodkar, S.
    Kaxiras, E.
    [J]. 2D MATERIALS, 2016, 3 (01):
  • [20] Quasiparticle band structures of bulk and few-layer PdSe2 from first-principles GW calculations
    Kim, Han-gyu
    Choi, Hyoung Joon
    [J]. PHYSICAL REVIEW B, 2021, 103 (16)