Effects of annealing temperature and ion doping on energy storage performance of Na0.5Bi0.5TiO3-Based thin films

被引：1
作者：
Chi, Qingguo [1 ,2 ]
Dong, Bo [1 ,2 ]
Yin, Chao [1 ,2 ]
Zhang, Xue [1 ,2 ]
Xu, Zining [1 ,2 ]
Zhang, Changhai [1 ,2 ]
Zhang, Yue [1 ,2 ]
Zhang, Tiandong [1 ,2 ]
机构：
[1] Harbin Univ Sci & Technol, Key Lab Engn Dielect & Its Applicat, Minist Educ, Harbin 150080, Peoples R China
[2] Harbin Univ Sci & Technol, Sch Elect & Elect Engn, Harbin 150080, Peoples R China
来源：
CERAMICS INTERNATIONAL | 2024年 / 50卷 / 19期
基金：
中国国家自然科学基金;
关键词：
Lead-free films; Ion doping; Annealing temperature; Energy storage; DIELECTRIC CAPACITOR; DENSITY; STABILITY; CERAMICS; PROPERTY;
D O I：
10.1016/j.ceramint.2024.06.319
中图分类号：
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
Lead-free ferroelectric thin film capacitors offering superb power density and fast charge-discharge rates are ideal for energy storage applications. However, the trade-off relationship between polarization strength and breakdown strength significantly hinders the improvement of energy storage performance. In this work, relaxorferroelectric Na0.5Bi0.5TiO3 (NBT) thin films have been deposited on Pt/Ti/SiO2/Si substrate via sol-gel method. First, the energy storage performance of the films is optimized by adjusting the annealing temperature. It is found that the NBT film annealed at 650 degrees C has both excellent breakdown strength and polarization strength. Then the influence of ion doping on the energy storage performance of NBT films has been studied. An excellent energy storage density of 42.1 J/cm3 and efficiency of 55.8 % are simultaneously achieved in the 2 % Mn-NBT thin film. Additionally, the energy storage performance remains stable within the temperature range of 25-180 degrees C and frequency range of 500-5000 Hz. The energy storage performance of 2 % Mn-NBT thin film did not decrease significantly after 107 electrical cycles. It is predicted that this work will advance the utilization of Na0.5Bi0.5TiO3-based film capacitors in energy storage systems.
引用
收藏
页码：35128 / 35136
页数：9
相关论文
共 50 条
  • [1] Ultrahigh Energy Storage Performance of Flexible BMT-Based Thin Film Capacitors
    Bin, Chengwen
    Hou, Xu
    Xie, Yadan
    Zhang, Jingtong
    Yang, Han
    Xu, Linrong
    Wei, Hua
    Wang, Jie
    [J]. SMALL, 2022, 18 (04)
  • [2] Significantly improved energy storage properties and cycling stability in La-doped PbZrO3 antiferroelectric thin films by chemical pressure tailoring
    Cai, Henghui
    Yan, Shiguang
    Zhou, Mingxing
    Liu, Ningtao
    Ye, Jiaming
    Li, Song
    Cao, Fei
    Dong, Xianlin
    Wang, Genshui
    [J]. JOURNAL OF THE EUROPEAN CERAMIC SOCIETY, 2019, 39 (15) : 4761 - 4769
  • [3] Great enhancement of energy storage density and power density in BNBT/xBFO multilayer thin film hetero-structures
    Chen, Pan
    Wu, Shuanghao
    Li, Peng
    Zhai, Jiwei
    Shen, Bo
    [J]. INORGANIC CHEMISTRY FRONTIERS, 2018, 5 (09): : 2300 - 2305
  • [4] High energy storage efficiency and temperature stability realized in the Ba0.3Sr0.7Zr0.18Ti0.82O3/LaNiO3 heterostructure thin films directly deposited on the conductive Si substrate
    Chen, Xiaoyang
    Liu, Yun
    Huang, Binbin
    Yu, Ping
    [J]. APPLIED PHYSICS LETTERS, 2022, 121 (12)
  • [5] Enhanced energy storage performance of bilayer composite films with Na0.5Bi0.5TiO3 platelets
    Dang, Zhener
    Yang, Haibo
    Lin, Ying
    Yuan, Qibin
    [J]. CERAMICS INTERNATIONAL, 2021, 47 (17) : 25009 - 25016
  • [6] Excellent energy-storage performance in Bi0.5Na0.5TiO3-based lead-free composite ceramics via introducing pyrochlore phase Sm2Ti2O7
    Deng, Tao
    Liu, Zhen
    Hu, Tengfei
    Dai, Kai
    Hu, Zhigao
    Wang, Genshui
    [J]. CHEMICAL ENGINEERING JOURNAL, 2023, 465
  • [7] Optimized energy storage performances in morphotropic phase boundary (Na0.8K0.2)0.5Bi0.5TiO3-based lead-free ferroelectric thin films
    Ding, Jie
    Zhang, Yiling
    Zhai, Yizan
    Su, Zhen
    Liu, Jinjun
    Chen, Jianwen
    Pan, Zhongbin
    [J]. CERAMICS INTERNATIONAL, 2022, 48 (05) : 6062 - 6068
  • [8] Manipulating leakage behavior via thickness in epitaxial BaZr0.35Ti0.65O3 thin film capacitors
    Fan, Qiaolan
    Ma, Chuansheng
    Ma, Chunrui
    Lu, Rui
    Cheng, Sheng
    Liu, Ming
    [J]. APPLIED PHYSICS LETTERS, 2020, 116 (19)
  • [9] Temperature dependence of ferroelectric property and leakage mechanism in Mn-doped Pb(Zr0.3Ti0.7)O3 films
    Geng, Wenping
    Qiao, Xiaojun
    Zhao, Caiqin
    Zheng, Dongwan
    Li, Yaqing
    Zhang, Le
    Bi, Kaixi
    Yang, Yun
    Sun, Yao
    Chou, Xiujian
    [J]. CERAMICS INTERNATIONAL, 2021, 47 (17) : 24047 - 24052
  • [10] Fatigue-free dielectric capacitor with giant energy density based on lead-free Na0.5Bi0.5TiO3-based film
    Han, Yajie
    Qian, Jin
    Yang, Changhong
    [J]. JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, 2019, 30 (24) : 21369 - 21376
12345