Barrier heights and strong fermi-level pinning at epitaxially grown ferromagnet/ZnO/metal Schottky Interfaces for opto-spintronics applications

被引：0

作者：

Belmoubarik, Mohamed ^{[1
,2
,3
]}

机构：

[1] INL, Int Iberian Nanotechnol Lab, Ave Mestre Jose Veiga S-N, P-4715330 Braga, Portugal

[2] Tohoku Univ, Dept Elect Engn, Sendai 8908579, Japan

[3] Mohammed VI Polytech Univ, Inst Appl Phys, Lot 660, Hay Moulay Rachid Ben Gue 43150, Morocco

来源：

SURFACES AND INTERFACES | 2024年 / 53卷

基金：

日本学术振兴会;

关键词：

Zinc oxide; Molecular bream epitaxy; Ferromagnet alloy; Schottky barrier; Fermi-level pining; FIELD-EFFECT TRANSISTORS; DIODES;

D O I：

10.1016/j.surfin.2024.105091

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Schottky contacts at the ferromagnet/ZnO interface are good candidates for the realization and control of several semiconductor emerging magnetic phenomena such spin injection and spin-controlled photonics. In this work, we demonstrate the epitaxial growth of single-phase and wurtzite-ZnO thin films on fcc Pt/Co0.30Pt0.70 (111) electrodes by molecular beam epitaxy technique. While the magnetic properties of the Pt/Co0.30Pt0.70 buffer remain unchanged after the ZnO growth, the electric measurements of back-to-back Schottky diodes reveal Schottky barrier heights at the metal/ZnO interfaces in the range of 590-690 meV using Cu, Pt and Co0.30Pt0.70 contacts. A pinning factor S and a charge neutrality level (CNL) Phi(CNL) of 0.08 and 4.94 eV, respectively, are obtained indicating a strong Fermi-level pining with a CNL level that lies 0.64 eV bellow the conductance band of ZnO semiconductor. These experimental findings indicate that Co0.30Pt0.70/ZnO interface follows the metal-induced gap states model and can open a pathway for the realization of opto-spintronics applications such spin-LEDs.

引用

页数：9

共 71 条

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