Review of fault detection techniques in power converters: Fault analysis and diagnostic methodologies

被引:6
作者
Avina-Corral, Victor [1 ]
Rangel-Magdaleno, Jose de Jesus [1 ]
Barron-Zambrano, Jose Hugo [1 ]
Rosales-Nunez, Sergio [1 ]
机构
[1] Inst Nacl Astrofis Opt & Electr, Elect Dept, Digital Syst Grp, Luis Enrique Erro 1, Cholula 72840, Puebla, Mexico
关键词
Power voltage source converters; Timely fault detection; Fault identification; Short circuit fault; Open circuit fault; Sensor fault; Grid fault; Diagnostic methodologies; Fault tolerance; Asymmetrical converters; OPEN-CIRCUIT-FAULT; MODULAR MULTILEVEL CONVERTERS; MODEL-PREDICTIVE CONTROL; CURRENT SENSOR FAULT; VOLTAGE-SOURCE CONVERTER; SYNCHRONOUS MOTOR DRIVE; TO-BACK CONVERTERS; SINGLE-PHASE; SOURCE INVERTER; TOLERANT OPERATION;
D O I
10.1016/j.measurement.2024.114864
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Power converters are crucial components in modern electrical systems, and their reliable operation is paramount for maintaining system performance and safety. However, they are susceptible to various faults, including overcurrents, voltage sags, sensor failures, and asymmetrical voltage in the grid, which can adversely affect the converter's performance and the entire system. Hence, detecting and diagnosing faults in power converters promptly is crucial. Open circuit (OC) and short circuit (SC) faults are common in power electronics, especially in transistors, and can be caused by overvoltage, overcurrent, elevated temperatures, and other factors. An OC in a transistor means it cannot conduct current, resulting in a voltage drop in the circuit and power reduction. Conversely, a SC in a transistor means that current flows through it unrestricted, potentially damaging the circuit and power supply. Sensor failures can also cause control problems, leading to the above issues. Additionally, grid or external load failures can cause control problems and damage the converter's internal components. These faults can be particularly dangerous in Voltage Source Converters (VSC), affecting their ability to maintain synchronization of the output signal with the power supply. Additionally, SC faults can damage other VSC components, potentially resulting in total system failure. Therefore, it is crucial to have measurement and fault detection strategies that can, through digital signal processing, quickly detect and locate problems in transistors, enabling a faster and more effective response to prevent damage to other system components and ensure the safety of the equipment and the power grid. This work aims to evaluate various techniques used in recent years for detecting faults in power converters, particularly in VSC transistors. The focus is on assessing the speed of detection, computational complexity, robustness, and efficiency, as well as the difficulty of tuning, calibration, and adjustment of these techniques. By evaluating these factors, this study seeks to provide insights into the strengths and weaknesses of different measurement and fault detection strategies, which can be valuable for researchers and practitioners in the field of power electronics instrumentation, which is critical for extending the lifetime of VSC. Research indicates that signal processing techniques excel in rapid fault identification but are accompanied by notable tuning complexities. In contrast, although slightly slower, model-based techniques are recognized for their efficient and straightforward tuning, which has led to extensive research in this field. However, data-driven approaches exhibit slower failure detection rates than the aforementioned techniques. The complexity of fault location algorithms escalates with implementing multilevel converters; nonetheless, their resilience and reconfiguration capabilities surpass those of two or three-level converters. Integrating multilevel techniques with PWM modulation in oversized three-level cells eliminates expensive inductive filters. It enhances tolerance to VSC failures, resulting in minimal power reduction during in fault thus
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页数:29
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共 160 条
  • [81] Fast Transistor Open-Circuit Faults Diagnosis in Grid-Tied Three-Phase VSIs Based on Average Bridge Arm Pole-to-Pole Voltages and Error-Adaptive Thresholds
    Li, Zhan
    Ma, Hao
    Bai, Zhihong
    Wang, Yuxi
    Wang, Borong
    [J]. IEEE TRANSACTIONS ON POWER ELECTRONICS, 2018, 33 (09) : 8040 - 8051
  • [82] A novel fault diagnostic method in power converters for wind power generation system
    Liang, Jinping
    Zhang, Ke
    Al-Durra, Ahmed
    Zhou, Daming
    [J]. APPLIED ENERGY, 2020, 266
  • [83] Reactive Power Control of Three-Phase Grid-Connected PV System During Grid Faults Using Takagi-Sugeno-Kang Probabilistic Fuzzy Neural Network Control
    Lin, Faa-Jeng
    Lu, Kuang-Chin
    Ke, Ting-Han
    Yang, Bo-Hui
    Chang, Yung-Ruei
    [J]. IEEE TRANSACTIONS ON INDUSTRIAL ELECTRONICS, 2015, 62 (09) : 5516 - 5528
  • [84] Design and Implementation of a Single-Source 17-Level Inverter for a Single-Phase Transformer-Less Grid-Connected Photovoltaic Systems
    Majumdar, Saikat
    Jana, Kartick Chandra
    Pal, Pradipta Kumar
    Sangwongwanich, Ariya
    Blaabjerg, Frede
    [J]. IEEE JOURNAL OF EMERGING AND SELECTED TOPICS IN POWER ELECTRONICS, 2022, 10 (04) : 4469 - 4485
  • [85] Enhancing resilience of PV-fed microgrid by improved relaying and differentiating between inverter faults and distribution line faults
    Manohar, Murli
    Koley, Ebha
    Ghosh, Subhojit
    [J]. INTERNATIONAL JOURNAL OF ELECTRICAL POWER & ENERGY SYSTEMS, 2019, 108 : 271 - 279
  • [86] MarketreSearchFuture, 2023, Silicon Carbide Market Research Report Information By Type (Black Silicon Carbide and Green Silicon Carbide), By Application (Steel & Energy, Automotive, Aerospace & Aviation, Military & Defense, Electronics & Semiconductors, and Medical & Healthcare), And By Region (North America, Europe, Asia-Pacific, And Rest Of The World) - Market Forecast Till 2030
  • [87] MarketsandMarkets, 2023, Silicon Carbide Market by Device (SiC Discrete Device, SiC Module), Wafer Size (Up to 150 MM, >150 MM), End-Use Application (Automotive, Energy & Power, Transportation, Industrial, Telecommunications) and Region - Global Forecast to 2028
  • [88] MarketsandMarkets, Gallium Nitride Semiconductor Device Market by Device Type (RF, Power, Opto), Wafer Size, Application, Vertical (Consumer and Enterprises, Automotive, Telecommunications), and Geography
  • [89] A Geometric Approach to Fault Detection and Isolation in a Grid-Connected Inverter
    Mashreghi, Ali
    Namvar, Mehrzad
    [J]. IEEE TRANSACTIONS ON CONTROL SYSTEMS TECHNOLOGY, 2021, 29 (06) : 2622 - 2629
  • [90] A Method for Fault Detection and Isolation Based on the Processing of Multiple Diagnostic Indices: Application to Inverter Faults in AC Drives
    Meinguet, Fabien
    Sandulescu, Paul
    Kestelyn, Xavier
    Semail, Eric
    [J]. IEEE TRANSACTIONS ON VEHICULAR TECHNOLOGY, 2013, 62 (03) : 995 - 1009