A Low Quiescent Current Capacitor-less LDO Voltage Regulator in 22 nm FDSOI CMOS

被引：1

作者：

Dossanov, Adilet ^{[1
]}

Issakov, Vadim ^{[1
]}

机构：

[1] Tech Univ Carolo Wilhelmina Braunschweig, Inst CMOS Design, Braunschweig, Germany

来源：

2024 19TH CONFERENCE ON PH.D RESEARCH IN MICROELECTRONICS AND ELECTRONICS, PRIME 2024 | 2024年

关键词：

low-dropout regulator; dc-dc regulator; transient response; frequency compensation; current path; high PSR;

D O I：

10.1109/PRIME61930.2024.10559703

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper presents a low-power, capacitor-less, low-dropout (LDO) voltage regulator fabricated in a 22nm FDSOI CMOS technology. The proposed LDO design uses a current charge and discharge path compensation circuit that provides a rapid transient response as well as good stability at wide load variations. It draws a quiescent current of 2.5 mu A from a single 1.5V supply voltage. Measurement results show that the LDO provides a stable 0.8V output voltage up to 20 mA with 0.8 mV/V line regulation and 1.15mV/mA load regulation. Furthermore, the power supply rejection ratio (PSRR) of 62 dB up to 100 Hz and compact size of 0.04mm(2), including a 100 pF load capacitor, makes the proposed LDO design an attractive solution for ultra-low-power applications, e.g., biomedical and sensing interfaces.

引用

页数：4

共 13 条

[1]

Choi HJ, 2021, IEEE ASIAN SOLID STA

[2] A 1.28mW K-Band Modified Gilbert-Cell Mixer Design in 22nm FDSOI CMOS [J].

Dossanov, Adilet ;

Issakov, Vadim .

2024 IEEE 24TH TOPICAL MEETING ON SILICON MONOLITHIC INTEGRATED CIRCUITS IN RF SYSTEMS, SIRF, 2024, :110-112

[3]

Engur Y., 2023, 2023 IEEE BIOM CIRC, P1, DOI [10.1109/BioCAS58349.2023.10389051, DOI 10.1109/BIOCAS58349.2023.10389051]

[4]

Gweon S, 2019, IEEE INT SYMP CIRC S

[5] Ultrahigh PSR Output-Capacitor-Free Adaptively Biased 2-Power-Transistor LDO With 200-mV Dropout [J].

Han, Xu ;

Ki, Wing-Hung ;

Wu, Lianbo ;

Gao, Yuan .

IEEE SOLID-STATE CIRCUITS LETTERS, 2022, 5 :106-109

[6] A 0-to-35mA NMOS Capacitor-Less LDO with Dual-Loop Regulation Achieving 3ns Response Time and 1pF-to-10nF Loading Range [J].

Hsu, Wen-Yang ;

Aymerich, Joan ;

Yang, Xiaolin ;

Sawigun, Chutham ;

Coppejans, Philippe ;

Lopez, Carolina Mora .

IEEE 49TH EUROPEAN SOLID STATE CIRCUITS CONFERENCE, ESSCIRC 2023, 2023, :253-256

[7]

Issakov V, 2020, IEEE RAD FREQ INTEGR, P159, DOI [10.1109/rfic49505.2020.9218295, 10.1109/RFIC49505.2020.9218295]

[8] A K-Band Complex Permittivity Sensor for Biomedical Applications in 130-nm SiGe BiCMOS [J].

Lammert, V. ;

Heine, C. ;

Wessel, J. ;

Jamal, F. I. ;

Kissinger, D. ;

Geiselbrechtinger, A. ;

Issakov, V. .

IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS II-EXPRESS BRIEFS, 2019, 66 (10) :1628-1632

[9] Full on-chip CMOS low-dropout voltage regulator [J].

Milliken, Robert J. ;

Silva-Martinez, Jose ;

Sanchez-Sinencio, Edgar .

IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS I-REGULAR PAPERS, 2007, 54 (09) :1879-1890

[10]

Park Hyunjun, 2022, 2022 IEEE Asian Solid-State Circuits Conference (A-SSCC), P6, DOI 10.1109/A-SSCC56115.2022.9980602

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