Evaluation of MOS interface trap generation after BTI stress using flicker noise

被引：0

作者：

Jiang, Yi ^{[1
]}

Chen, Yanning ^{[2
]}

Liu, Fang ^{[2
]}

Wu, Bo ^{[2
]}

Deng, Yongfeng ^{[2
]}

Gao, Dawei ^{[1
,3
,4
]}

Li, Junkang ^{[1
]}

Robertson, John ^{[1
,5
]}

Zhang, Rui ^{[1
]}

机构：

[1] Zhejiang Univ, Sch Integrated Circuits, Hangzhou 311200, Peoples R China

[2] Beijing Smart Chip Microelect Technol Co Ltd, Beijing 100089, Peoples R China

[3] Zhejiang ICsprout Semicond Co Ltd, Hangzhou 311200, Peoples R China

[4] Zhejiang CMOS Integrated Circuit Complete Proc & D, Hangzhou 311200, Peoples R China

[5] Univ Cambridge, Dept Engn, Cambridge CB3 0FA, England

来源：

MICROELECTRONICS RELIABILITY | 2024年 / 160卷

基金：

中国国家自然科学基金;

关键词：

MOSFETs; BTI; Interface traps; Threshold voltage shift; 1/f noise; 1/F NOISE; CMOS; MOSFETS; IMPACT;

D O I：

10.1016/j.microrel.2024.115478

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this study, the weak bias temperature instability (BTI) in both Si p- and n-MOSFETs was systematically investigated using subthreshold swing degradation (Delta S Delta S factor), threshold voltage shift (Delta Vth) Delta V t h ) and flicker noise (1/f f noise) characteristics. It is found that the 1/f f noise characteristics exhibit more pronounced deterioration compared to the Si/SiO2 2 interface degeneration under weak BTI stress. Furthermore, the observed linear relationship between the 1/f f noise characteristics and MOS interface trap density was confirmed by the carrier number fluctuation model, indicating that 1/f f noise characteristics could be considered as a sensitive and effective indicator for assessing MOS interface quality after weak BTI stress.

引用

页数：5

共 24 条

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