Over 600 V Lateral AlN-on-AlN Schottky Barrier Diodes with Ultra-Low Ideality Factor

被引：5

作者：

Mudiyanselage, Dinusha Herath ^{[1
]}

Wang, Dawei ^{[1
]}

Da, Bingcheng ^{[1
]}

He, Ziyi ^{[1
]}

Fu, Houqiang ^{[1
]}

机构：

[1] Arizona State Univ, Sch Elect Comp & Energy Engn, Tempe, AZ 85281 USA

来源：

APPLIED PHYSICS EXPRESS | 2024年 / 17卷 / 07期

基金：

美国国家科学基金会;

关键词：

aluminum nitride; Schottky barrier diodes; high-voltage; power electronics;

D O I：

10.35848/1882-0786/ad5e5a

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

This letter reports the demonstration of lateral AlN Schottky barrier diodes (SBDs) on single-crystal AlN substrates by metalorganic CVD (MOCVD) with an ultra-low ideality factor (eta) of 1.65, a high Schottky barrier height of 1.94 eV, a breakdown voltage (BV) of 640 V, and a record high normalized BV by the anode-to-cathode distance. The device current was dominated by thermionic emission, while most previously reported AlN SBDs suffered from defect-induced current with higher eta (>4). This work represents a significant step towards high-performance ultra-wide bandgap AlN-based high-voltage and high-power devices.

引用

页数：4

共 16 条

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