Design of Physically Unclonable Function Using Ferroelectric FET With Auto Write-Back Technique for Resource-Limited IoT Security

被引:1
作者
Lim, Sehee [1 ]
Hwang, Junghyeon [2 ]
Ko, Dong Han [1 ]
Kim, Se Keon [1 ]
Oh, Tae Woo [3 ]
Jeon, Sanghun [2 ]
Jung, Seong-Ook [1 ,4 ]
机构
[1] Yonsei Univ, Sch Elect & Elect Engn, Seoul 03722, South Korea
[2] Korea Adv Inst Sci & Technol, Sch Elect Engn, Daejeon 34141, South Korea
[3] Samsung Elect, DRAM Design Team, Memory Div, Hwaseong 18448, South Korea
[4] Articron Inc, Seoul 02447, South Korea
基金
新加坡国家研究基金会;
关键词
FeFETs; Nonvolatile memory; Internet of Things; Security; Circuit stability; Encryption; Microprocessors; Auto write-back; cell area; ferroelectric field-effect transistor (FeFET); low power; nonvolatile memory (NVM); physically unclonable function (PUF); process variation; stability; PUF; TRANSISTOR;
D O I
10.1109/JIOT.2024.3399482
中图分类号
TP [自动化技术、计算机技术];
学科分类号
0812 ;
摘要
Physically unclonable function (PUF) is a lightweight encryption technique that generates random digital keys (responses) using intrinsic process variations of devices, which is a promising solution for Internet of Things (IoT) security due to its compatibility with constrained resources. Recent attempts to adopt nonvolatile memory (NVM) into PUFs have enhanced stability through a write-back technique that maintains consistent responses from the enrollment phase even under wide environmental variations by storing the response in the NVM device. However, the stability of the previous NVM PUFs is limited by the low-on/off ratio of the NVMs. In addition, the circuit required to implement the write-back technique poses challenges of increased area and energy consumption. Considering the hardware limitations and power constraints of IoT devices, this article proposes a ferroelectric field-effect transistor (FeFET) PUF as a suitable security solution. The high-on/off ratio of FeFET and the proposed auto write-back technique that does not require additional circuitry realize the stability improvement (a bit error rate of <0.0001%) under wide environmental variations without incurring area and energy overheads. The negligible off current of FeFET prevents static power consumption, which leads to the lowest energy consumption of 6.70e(-15 )J during the response generation of the FeFET PUF. In addition, the compact PUF cell composed of two FeFETs achieves a high density of 87.37 F-2.
引用
收藏
页码:27676 / 27686
页数:11
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