2D Gr/WSe2/MoTe2 vertical heterojunction for self-powered photodiode with ultrafast response and high sensitivity

Two-dimensional materials without lattice constraints can be combined into form heterojunctions via van der Waals forces, providing opportunities for the future development of novel high-performance photodetectors. In non-vertical heterojunction devices with long carrier transport channels, SRH recombination due to defect and interface states in the heterojunction and Langevin recombination due to Coulomb interactions induce large amounts of photogenerated carrier recombination, leading to low quantum efficiencies of the heterojunction. At the same time, defect and interface trap states, as well as the long channel of the non-vertical heterojunction device, lead to a slow response speed of the device. In this work, a 2D WSe2/MoTe2 2 /MoTe 2 vertical heterojunction photodiode with a transparent graphene top electrode has been designed to simultaneously achieve high sensitivity and fast response speed of photodetectors. Benefiting from the vertical device structure, high-quality interface and low contact resistance, the photogenerated electron-hole pairs can be efficiently separated and transported. The photodiode exhibits remarkable rectification characteristics with a rectification ratio as high as 1.4 x 104, 4 , and provides a broadband and self-powered photodetection from the visible to NIR bands (405-1064 nm) with a maximum responsivity of 0.33 A/W at 785 nm. In particular, the photodiode achieves an ultra-fast rise/fall time of 6.49/6.22 mu s at 0 V and a further reduction of the response time to 1.68/1.2 mu s at a reverse bias of-1 V. This ultra-fast response allows the photodiode to detect switching signals with a cutoff frequency of more than 70 kHz and 200 kHz at 0 V and-1 V, respectively. This work opens up new opportunities for the development of integrated 2D photodetectors with low power consumption, high sensitivity, and high speed.