The effectiveness of element doping in enhancing the hydrogen storage performance of ZrCo alloys has been well established. However, the impact of single element doping is limited, and research on the synergistic effect of multi-element alloying remains relatively scarce. In this paper, the hydrogen storage properties of Zr0 & sdot;75Ti0 & sdot;125Nb0 & sdot;125Co0 & sdot;75Ni0.25 (ZTNCN) alloy were investigated using the first-principles method to explore the synergistic effect of Ti, Nb and Ni doping on ZrCo. The results indicate that the (-110) surface of ZTNCN undergoes significant reconstruction, leading to enhanced adsorption and dissociation of hydrogen on the surface. Moreover, there is no apparent dissociation barrier for H2, facilitating easier migration of H on the surface. The difference in atomic size leads to a variation in lattice interstices, resulting in a lower diffusion energy barrier for H compared to that of the ZrCoHx system. Through atomic substitution, the space within the 8e site becomes compressed, which makes the alloy exhibit improved resistance against disproportionation. Therefore, the synergistic effect of Ti, Nb, and Ni can greatly enhance hydrogen absorption and desorption kinetics in alloys and improve anti-disproportionation.
机构:
Chinese Acad Sci, Shanghai Inst Appl Phys, Shanghai 201800, Peoples R China
Univ Chinese Acad Sci, Beijing 100049, Peoples R China
ShanghaiTech Univ, Shanghai 201210, Peoples R ChinaChinese Acad Sci, Shanghai Inst Appl Phys, Shanghai 201800, Peoples R China
Yang, Guo
Liu, Wenguan
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Chinese Acad Sci, Shanghai Inst Appl Phys, Shanghai 201800, Peoples R ChinaChinese Acad Sci, Shanghai Inst Appl Phys, Shanghai 201800, Peoples R China
Liu, Wenguan
Wu, Shengwei
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Chinese Acad Sci, Shanghai Inst Appl Phys, Shanghai 201800, Peoples R ChinaChinese Acad Sci, Shanghai Inst Appl Phys, Shanghai 201800, Peoples R China
Wu, Shengwei
Wu, Xijun
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Univ South China, Hengyang 421001, Peoples R ChinaChinese Acad Sci, Shanghai Inst Appl Phys, Shanghai 201800, Peoples R China
Wu, Xijun
Qian, Nan
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Chinese Acad Sci, Shanghai Inst Appl Phys, Shanghai 201800, Peoples R ChinaChinese Acad Sci, Shanghai Inst Appl Phys, Shanghai 201800, Peoples R China
Qian, Nan
Cheng, Hongwei
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Bengbu Univ, Bengbu 233030, Peoples R ChinaChinese Acad Sci, Shanghai Inst Appl Phys, Shanghai 201800, Peoples R China
Cheng, Hongwei
Gao, Jie
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Chinese Acad Sci, Shanghai Inst Appl Phys, Shanghai 201800, Peoples R China
Univ Chinese Acad Sci, Beijing 100049, Peoples R ChinaChinese Acad Sci, Shanghai Inst Appl Phys, Shanghai 201800, Peoples R China
Gao, Jie
Zeng, Youshi
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Chinese Acad Sci, Shanghai Inst Appl Phys, Shanghai 201800, Peoples R ChinaChinese Acad Sci, Shanghai Inst Appl Phys, Shanghai 201800, Peoples R China
Zeng, Youshi
Liu, Wei
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Chinese Acad Sci, Shanghai Inst Appl Phys, Shanghai 201800, Peoples R China
Univ Chinese Acad Sci, Beijing 100049, Peoples R ChinaChinese Acad Sci, Shanghai Inst Appl Phys, Shanghai 201800, Peoples R China
Liu, Wei
Li, Yan
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Chinese Acad Sci, Shanghai Inst Appl Phys, Shanghai 201800, Peoples R China
Univ Chinese Acad Sci, Beijing 100049, Peoples R China
ShanghaiTech Univ, Shanghai 201210, Peoples R ChinaChinese Acad Sci, Shanghai Inst Appl Phys, Shanghai 201800, Peoples R China
机构:
Bhabha Atom Res Ctr, Prod Dev Div, Mumbai 400085, IndiaBhabha Atom Res Ctr, Prod Dev Div, Mumbai 400085, India
Jat, Ram Avtar
Rawat, Deepak
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Bhabha Atom Res Ctr, Prod Dev Div, Mumbai 400085, IndiaBhabha Atom Res Ctr, Prod Dev Div, Mumbai 400085, India
Rawat, Deepak
Sharma, Abhishek
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Bhabha Atom Res Ctr, Prod Dev Div, Mumbai 400085, IndiaBhabha Atom Res Ctr, Prod Dev Div, Mumbai 400085, India
Sharma, Abhishek
Parida, S. C.
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Bhabha Atom Res Ctr, Prod Dev Div, Mumbai 400085, India
Homi Bhabha Natl Inst, Mumbai, IndiaBhabha Atom Res Ctr, Prod Dev Div, Mumbai 400085, India