Design of Quality High Factor Fully Differential CMOS Active Inductor with Cascode Current Mirror for 2-5 GHz Frequency Ranges

被引:0
作者
Ali, Hussein Anes AlShaikh [1 ]
Murad, Sohiful Anuar Zainol [2 ]
Abu Bakar, Faizah [2 ]
Hasan, Ahmad Fariz [2 ]
Karim, Jamilah [3 ]
机构
[1] Univ Malaysia Perlis, Fac Elect Engn Technol FTKEN, Arau, Perlis, Malaysia
[2] Univ Malaysia Perlis, Fac Elect Engn Technol, Ctr Excellent Micro Syst Technol MiCTEC, Arau, Perlis, Malaysia
[3] Univ Teknol MARA UiTM, Coll Engn, Sch Elect Engn, Shah Alam, Selangor, Malaysia
来源
PROCEEDINGS OF THE 12TH INTERNATIONAL CONFERENCE ON COMMUNICATIONS, CIRCUITS, AND SYSTEMS, ICCCAS 2023 | 2024年 / 1193卷
关键词
CMOS; Fully differential; Active inductor; Quality factor; Rf front-end; POWER-AMPLIFIER;
D O I
10.1007/978-981-97-2636-3_13
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
This paper presents a fully differential CMOS active inductor with a cascoded current mirror for 2-5 GHz frequency ranges applications. The proposed active inductor is designed using CMOS 0.18-mu m process. The circuit is realized by a fully differential cross-coupled pair of transistors to provide negative feedback for high-quality factor (Q). The cascoded current mirror is employed as a biasing circuit for controlling the current source to vary the negative feedback and tuning the Q factor. Meanwhile, the two resistors at the differential structure help to control the frequency ranges. According to the simulation results, the higher Q factor of 12,580 k with an inductance of 11.4 nH is achieved at 3.6 GHz frequency. The frequency range from 2.6 GHz to 4.4 GHz can be obtained by tuning the value of the resistor. Moreover, it is observed that the supply voltage and current source can be varied to tune the Q factor values from 100 to 900 k. It is proved through a performance comparison with previously published research that the suggested active inductor is appropriate for RF in gigahertz frequency range applications.
引用
收藏
页码:167 / 175
页数:9
相关论文
共 3 条
  • [1] A Fully Differential CMOS Active Inductor with High Quality Factor and High Tunability
    Noferesti, Fatemeh
    Zarei, Hadi
    Pour, Mohammad Javad Ebrahimi
    Bijari, Abolfazl
    2019 27TH IRANIAN CONFERENCE ON ELECTRICAL ENGINEERING (ICEE 2019), 2019, : 355 - 359
  • [2] High Quality-Factor and Inductance of Symmetric Differential-Pair Structure Active Inductor Using a Feedback Resistance Design
    Hwang, Kyu Seok
    Cho, Choon Sik
    Lee, Jae W.
    Kim, Jaeheung
    2008 IEEE MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM DIGEST, VOLS 1-4, 2008, : 1320 - +
  • [3] Design of High-Quality Factor Active Indictor Using CMOS 0.18-μm Technology for 5G Applications
    Ali, H. A. A. AlShaikh
    Murad, S. A. Z.
    Hasan, A. F.
    Bakar, F. A.
    Sapawi, R.
    2022 IEEE INTERNATIONAL RF AND MICROWAVE CONFERENCE, RFM, 2022,