An Efficient, Variation Tolerant CNTFET Ternary Content Addressable Memory a PVT Variation Resilient Design

Now-a-days, carbon nanotube field effect transistors (CNTFETs) are most auspicious and substitute to conventional complementary metal oxide semiconductor FETs (CMOSFETs). This because that CNTFETs have various advantages such as reduced OFF current capacity, large stability, reduced power and large ballistic transport property over the CMOSFETs. Hence, in this paper, the ternary content addressable memory (TCAM) cell is proposed using the CNTFET technology to analyze the various performances such as delay, power dissipation and power delay product (PDP), respectively. The proposed TCAM cell is developed in HSPICE simulator at 32 nm technology node using CNTFET SPICE model. The simulations shows that CNTFET TCAM cell improved the overall performance by 55.07% than the conventional CMOS based TCAM cell. The impact of process, voltage, and temperature (PVT) variations on performance of the presented TCAM cell is also investigated. It is shown that the presented TCAM cell exhibits the least amount of performance variance for PVT variations.