Study of selective etching of TaN with respect to SiOCH dielectrics using SiF4 plasma processes

被引:2
作者
Otto IV, Ivo [1 ]
Vallee, Christophe [1 ]
机构
[1] Univ Albany, Coll Nanoscale Sci & Engn, Albany, NY 12205 USA
关键词
plasma etching; selective deposition; TaN; SiF4; TECHNOLOGY; CMP; CU; TEMPERATURE; SIMULATION; MIXTURES; SILICON;
D O I
10.35848/1347-4065/ad6f85
中图分类号
O59 [应用物理学];
学科分类号
摘要
TaN is used as a Cu diffusion barrier during metal interconnect formation to enable modern chip fabrication. In this study, the selective removal of TaN with respect to SiOCH dielectrics is explored using neutral dominant plasmas containing pure SiF4 or with O-2 or H-2 additives. SiF4 is studied because the Si-containing gas has been historically used to deposit Si-based films, but the gas also contains F capable of volatilizing Ta. This work explores the possibility of enabling both selective etching of TaN and selective deposition on SiOCH. SiF4 discharges are impacted by the addition of O-2 and H-2 gases; exhibiting significantly different deposition and etching regimes. The substrate temperature plays a critical role in modulating the TaN etching versus deposition window compared to SiOCH. Through this work, selective etching of TaN with respect to SiOCH is achieved.
引用
收藏
页数:11
相关论文
共 47 条
[1]  
Alarcón-Salazar J, 2016, CHEMICAL VAPOR DEPOSITION - RECENT ADVANCES AND APPLICATIONS IN OPTICAL, SOLAR CELLS AND SOLID STATE DEVICES, P159, DOI 10.5772/63012
[2]   Fluorinated-chlorinated SiO2 films prepared at low temperature by remote plasma-enhanced chemical-vapor deposition using mixtures of SiF4 and SiCl4 [J].
Alonso, JC ;
Pichardo, E ;
Rodríguez-Fernandez, L ;
Cheang-Wong, JC ;
Ortiz, A .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 2001, 19 (02) :507-514
[3]   Cryogenic nanoscale etching of silicon nitride selectively to silicon by alternating SiF4/O2 and Ar plasmas [J].
Antoun, G. ;
Tillocher, T. ;
Girard, A. ;
Lefaucheux, P. ;
Faguet, J. ;
Kim, H. ;
Zhang, D. ;
Wang, M. ;
Maekawa, K. ;
Cardinaud, C. ;
Dussart, R. .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 2022, 40 (05)
[4]   Role of NO in highly selective SiN/SiO2 and SiN/Si etching with NF3/O2 remote plasma: Experiment and simulation [J].
Barsukov, Yuri ;
Volynets, Vladimir ;
Lee, Sangjun ;
Kim, Gonjun ;
Lee, Byoungsu ;
Nam, Sang Ki ;
Han, Kyuhee .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 2017, 35 (06)
[5]   RF GLOW-DISCHARGE OF SIF4-H2 MIXTURES - DIAGNOSTICS AND MODELING OF THE A-SI PLASMA DEPOSITION PROCESS [J].
BRUNO, G ;
CAPEZZUTO, P ;
CICALA, G .
JOURNAL OF APPLIED PHYSICS, 1991, 69 (10) :7256-7267
[6]   Domain epitaxial growth of Ta3N5 film on c-plane sapphire substrate [J].
Chang, Jui-Che ;
Birch, Jens ;
Gueorguiev, Gueorgui Kostov ;
Bakhit, Babak ;
Greczynski, Grzegorz ;
Eriksson, Fredrik ;
Sandstrom, Per ;
Hultman, Lars ;
Hsiao, Ching-Lien .
SURFACE & COATINGS TECHNOLOGY, 2022, 443
[7]   Modeling the electrical effects of metal dishing due to CMP for on-chip interconnect optimization [J].
Chang, RZ ;
Cao, Y ;
Spanos, CJ .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2004, 51 (10) :1577-1583
[8]   Study of Cu diffusion behavior in low dielectric constant SiOC(-H) films deposited by plasma-enhanced chemical vapor deposition [J].
Choi, Chi Kyu ;
Lee, Heang Seuk ;
Navamathavan, R. ;
Woo, Jong-Kwan ;
Kim, Chang Young .
THIN SOLID FILMS, 2010, 518 (22) :6474-6477
[9]   Chemical Etching and Patterning of Copper, Silver, and Gold Films at Low Temperatures [J].
Choi, Tae-Seop ;
Hess, Dennis W. .
ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY, 2015, 4 (01) :N3084-N3093
[10]   Conduction and valence band positions of Ta2O5, TaON, and Ta3N5 by UPS and electrochemical methods [J].
Chun, WJ ;
Ishikawa, A ;
Fujisawa, H ;
Takata, T ;
Kondo, JN ;
Hara, M ;
Kawai, M ;
Matsumoto, Y ;
Domen, K .
JOURNAL OF PHYSICAL CHEMISTRY B, 2003, 107 (08) :1798-1803