Proposed equivalent circuit physics-based model of InP based double heterojunction bipolar transistors

被引:0
作者
Liu, Tao [1 ]
Wu, Gang [2 ]
Huang, Yongqing [3 ]
Yang, Taoxiang [1 ]
Zeng, Xiuhua [1 ]
Shi, Meiling [1 ]
Niu, Huijuan [4 ]
Fang, Wenjing [4 ]
机构
[1] Qujing Normal Univ, Coll Phys & Elect Engn, Qujing 655011, Peoples R China
[2] Lanzhou Univ Technol, Sch Sci, Lanzhou 730050, Peoples R China
[3] Beijing Univ Posts & Telecommun, State Key Lab Informat Photon & Opt Commun, Beijing 100876, Peoples R China
[4] Liaocheng Univ, Sch Phys Sci & Informat Technol, Shandong Prov Key Lab Opt Commun Sci & Technol, Liaocheng 252000, Peoples R China
关键词
Double heterojunction bipolar transistor; Equivalent circuit; Cutoff frequency; DESIGN CONSIDERATIONS; LIFETIME; DHBTS; GHZ;
D O I
10.1016/j.sse.2024.108979
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Significant discrepancies were found between experimental results and the results calculated by the conventional physics-based model for the cutoff frequency and some equivalent circuit parameters of double heterojunction bipolar transistors (DHBT). In order to accurately evaluate the primary quantitative performance of DHBT, a comprehensive physics-based model was developed and validated by comparing experimental data from three research institutions. The proposed physics-based model combines the equivalent circuit of the T-topology and hybrid-It topology, and includes modification formulas for estimating the intrinsic dynamic resistance of the base-collector and base-emitter junctions, as well as the cutoff frequency, the hybrid-It input capacitance, and the gain.
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页数:11
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